Abbildungen dienen nur als Referenz
SIS590DN-T1-GE3
+StücklisteCOMBO N- & P-CHANNEL 100 V (D-S)
-
HerstellerVishay Siliconix
-
Herstellerteil #SIS590DN-T1-GE3
-
Datenblatt SIS590DN-T1-GE3 DataSheet
-
Paket PowerPAK® 1212-8 Dual
-
Auf Lager49
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) |
| Rds On(Max) @ Id Vgs | 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Power - Max | 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
