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SKM200GB125D
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HerstellerHalbkron
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Herstellerteil #SKM200GB125D
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Datenblatt SKM200GB125D DataSheet
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Auf Lager14372
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Spezifikationen
| Attribut | Wert |
| EURoHS | Compliant |
| ECCN(US) | EAR99 |
| PartStatus | NRND |
| Automotive | No |
| PPAP | No |
| ChannelType | N |
| Configuration | Dual |
| MaximumCollector-EmitterVoltage(V) | 1200 |
| TypicalCollectorEmitterSaturationVoltage(V) | 3.3 |
| MaximumGateEmitterVoltage(V) | ±20 |
| MaximumContinuousCollectorCurrent(A) | 200 |
| MinimumOperatingTemperature(°C) | -40 |
| MaximumOperatingTemperature(°C) | 150 |
| Mounting | Screw |
| PackageHeight | 30.5 |
| PackageWidth | 61.4 |
| PackageLength | 106.4 |
| PCBchanged | 3 |
| SupplierPackage | Case D-56 |
| PinCount | 3 |
Übersicht
Description
The SKM200GB125D is designed for high-power applications, featuring a collector current rating of 200A and a collector-emitter voltage of 1200V. This makes it suitable for industrial applications such as motor drives, inverters, and power supplies. The module's design ensures efficient thermal management, which is crucial for maintaining performance and reliability in demanding environments.
It typically includes features such as overcurrent and thermal protection, and it is housed in a robust package to withstand harsh operating conditions. Its efficiency, durability, and compact size make it a popular choice for engineers looking to optimize performance and energy consumption in their systems.
Equivalent
1. Infineon: FZ600R12KE3
2. Mitsubishi: CM200DY-12H
3. Fuji Electric: 6MBP200RA120
4. Toshiba: MG200Q1US41
These alternatives offer similar ratings and functionality, but always check the specific electrical and mechanical parameters to ensure compatibility with your application.
Features
1. High Power Capability: This module is capable of handling a collector-emitter voltage (V_CE) of up to 1200 volts and a collector current (I_C) of 200 amperes.
2. IGBT Technology: It utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which offers efficient power switching and reduced conduction losses.
3. Dual Module Configuration: The module contains two IGBTs and two diodes, allowing for flexible circuit design and implementation in various applications.
4. Robust Design: It is designed to withstand high temperatures, typically operating in a range suitable for industrial environments.
5. Integrated Protection Diodes: Comes with built-in freewheeling diodes for inductive load protection.
6. High Efficiency: Offers low power loss and high-speed switching, which enhances overall system efficiency.
7. Versatile Applications: Commonly used in inverters, motor drives, and other high-power electronic devices.
These features make the SKM200GB125D suitable for demanding applications requiring reliable and efficient power management.
Pinout
The primary function of the SKM200GB125D is to control and convert electrical power efficiently in applications such as motor drives, inverters, and power supplies. It achieves this by combining the properties of a bipolar transistor with a MOSFET, which allows for high efficiency and fast switching. The module is rated for a collector-emitter voltage of 1200V and a collector current of 200A, making it suitable for medium to high-power applications.
Manufacturer
Application
1. Industrial Motor Drives: Used in variable frequency drives (VFDs) for controlling motor speed and torque.
2. Renewable Energy Systems: Employed in solar inverters and wind turbine converters for efficient energy conversion.
3. Power Supplies: Utilized in uninterruptible power supplies (UPS) for backup power solutions.
4. Electric Vehicles: Integral to inverter systems for EV motor drives.
5. Welding Equipment: Enhances performance in welding power supplies.
6. HVAC Systems: Improves efficiency in heating, ventilation, and air conditioning systems.
These applications benefit from the module's high efficiency, reliability, and thermal performance.