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SPA11N65C3
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HerstellerInfineon-Technologien
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Herstellerteil #SPA11N65C3
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Datenblatt SPA11N65C3 DataSheet
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Auf Lager5045
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Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 500 |
| Technology | Si |
| Mounting Type | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 11 A |
| Rds On | 380 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.9 V |
| Qg - Gate Charge | 45 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 33 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 5 ns |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 5 ns |
| Series | CoolMOS C3 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 44 ns |
| Typical Turn - On Delay Time | 10 ns |
| Width | 4.85 mm |
| Part # Aliases | SPA11N65C3XK SP000216318 SPA11N65C3XKSA1 |
| Unit Weight | 0.068784 oz |
Übersicht
Description
Key features include a fast switching speed, which enhances performance in high-frequency applications, and a robust thermal performance due to its TO-220 package, allowing for effective heat dissipation. The SPA11N65C3 also includes a gate-source voltage (Vgs) rating of ±20V, ensuring safe operation within specified limits.
This device is ideal for use in automotive, industrial, and consumer electronics, providing reliability and efficiency for various electronic designs. Proper thermal management and appropriate driver circuits are essential for optimal performance in practical applications.
Equivalent
Features
1. Voltage Rating: 650V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 11A, allowing for robust performance in demanding environments.
3. Low RDS(on): With a maximum RDS(on) of around 0.9 ohms (at VGS = 10V), it ensures lower conduction losses and improved efficiency.
4. Fast Switching Speed: This MOSFET provides rapid switching capabilities, which is beneficial for high-frequency applications.
5. Thermal Resistance: Good thermal performance with a maximum junction temperature of 150°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: Facilitates easy heat dissipation and convenient mounting.
These features make the SPA11N65C3 suitable for applications like power supplies, converters, and motor control systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET, allowing it to switch on and off by applying a voltage. It is responsible for the conduction between the drain and source.
2. Drain (D): This is the pin where the current enters the MOSFET when it is in the on state. It connects to the load in a circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The SPA11N65C3 is designed for high-voltage applications, rated for 650V, and is commonly used in power management and switching applications.
Manufacturer
Founded in 1987 through a merger of two companies, STMicroelectronics has its headquarters in Geneva, Switzerland. It is known for its commitment to innovation, focusing on developing solutions for energy efficiency, automotive applications, and the Internet of Things (IoT). The SPA11N65C3 is typically used as a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and is popular in power management applications due to its high voltage and current capabilities.
As a major player in the semiconductor industry, STMicroelectronics is involved in research and development, production, and marketing of its products worldwide, contributing significantly to advancements in technology across various domains.