SPA11N65C3

Abbildungen dienen nur als Referenz

SPA11N65C3

+Stückliste

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 500
Technology Si
Mounting Type Through Hole
Package / Case TO-220FP-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 650 V
Id - Continuous Drain Current 11 A
Rds On 380 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 3.9 V
Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 33 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 5 ns
Height 16.15 mm
Length 10.65 mm
Rise Time 5 ns
Series CoolMOS C3
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 44 ns
Typical Turn - On Delay Time 10 ns
Width 4.85 mm
Part # Aliases SPA11N65C3XK SP000216318 SPA11N65C3XKSA1
Unit Weight 0.068784 oz

Übersicht

Description

The SPA11N65C3 is a high-voltage N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 11A, making it suitable for high-power circuits. This MOSFET offers low on-resistance, typically around 0.9 ohms, which helps minimize power loss and improve efficiency in applications such as power supplies, motor drives, and lighting control.
Key features include a fast switching speed, which enhances performance in high-frequency applications, and a robust thermal performance due to its TO-220 package, allowing for effective heat dissipation. The SPA11N65C3 also includes a gate-source voltage (Vgs) rating of ±20V, ensuring safe operation within specified limits.
This device is ideal for use in automotive, industrial, and consumer electronics, providing reliability and efficiency for various electronic designs. Proper thermal management and appropriate driver circuits are essential for optimal performance in practical applications.

Equivalent

The SPA11N65C3 is an N-channel MOSFET with a 650V rating and a current capacity of 11A. Equivalent products include the STP11NK65Z, IRF840, and MTP11N65E. Always check specific datasheets for detailed specifications to ensure compatibility for your application.

Features

The SPA11N65C3 is a high-voltage N-channel MOSFET designed for various applications, including power switching and power management. Key features include:
1. Voltage Rating: 650V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 11A, allowing for robust performance in demanding environments.
3. Low RDS(on): With a maximum RDS(on) of around 0.9 ohms (at VGS = 10V), it ensures lower conduction losses and improved efficiency.
4. Fast Switching Speed: This MOSFET provides rapid switching capabilities, which is beneficial for high-frequency applications.
5. Thermal Resistance: Good thermal performance with a maximum junction temperature of 150°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: Facilitates easy heat dissipation and convenient mounting.
These features make the SPA11N65C3 suitable for applications like power supplies, converters, and motor control systems.

Pinout

The SPA11N65C3 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to switch on and off by applying a voltage. It is responsible for the conduction between the drain and source.

2. Drain (D): This is the pin where the current enters the MOSFET when it is in the on state. It connects to the load in a circuit.

3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The SPA11N65C3 is designed for high-voltage applications, rated for 650V, and is commonly used in power management and switching applications.

Manufacturer

The SPA11N65C3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is a multinational corporation that specializes in designing and manufacturing a wide range of semiconductor products, including integrated circuits, microcontrollers, and sensors. The company serves various sectors, including automotive, industrial, consumer electronics, and communications.
Founded in 1987 through a merger of two companies, STMicroelectronics has its headquarters in Geneva, Switzerland. It is known for its commitment to innovation, focusing on developing solutions for energy efficiency, automotive applications, and the Internet of Things (IoT). The SPA11N65C3 is typically used as a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and is popular in power management applications due to its high voltage and current capabilities.
As a major player in the semiconductor industry, STMicroelectronics is involved in research and development, production, and marketing of its products worldwide, contributing significantly to advancements in technology across various domains.

Application

The SPA11N65C3 is a N-channel MOSFET widely used in various applications due to its high voltage and current handling capabilities. Key application areas include power supplies, motor drivers, and DC-DC converters. It is also utilized in industrial automation, renewable energy systems like solar inverters, and electric vehicles for switching and amplification purposes. Additionally, it can be found in consumer electronics for power management and thermal regulation. Its efficiency and thermal performance make it suitable for high-frequency switching applications as well.

Package

The SPA11N65C3 is typically available in a TO-220 package. This package type features three leads and is designed for efficient heat dissipation, making it suitable for power applications.

Produkte, die mit SPA11N65C3 zusammenhängen