Abbildungen dienen nur als Referenz
SQ2318AES-T1_GE3
+StücklisteMOSFET N-CH 40V 8A SOT23-3
-
HerstellerVishay Siliconix
-
Herstellerteil #SQ2318AES-T1_GE3
-
Datenblatt SQ2318AES-T1_GE3 DataSheet
-
Paket SOT-23-3
-
Auf Lager7439
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 31mOhm @ 7.9A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 555 pF @ 10 V |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
To gain a thorough understanding of the SQ2318AES-T1_GE3, one would typically refer to its datasheet. A datasheet provides essential information, including electrical specifications, pin configuration, thermal characteristics, and application guidelines. For engineers and technicians, this information is vital for integrating the component into larger systems or ensuring compatibility with other electronics.
In summary, while the SQ2318AES-T1_GE3 seems to be a specialized electronic part, consulting its datasheet or manufacturer documentation would be necessary for specific details on its application and technical characteristics.
Equivalent
Features
1. Type: N-channel enhancement mode MOSFET.
2. Voltage: It usually supports a drain-source voltage (V_DS) that can vary, but often around 20V to 60V for small to medium applications.
3. Current: Typically, it can handle a continuous drain current (I_D) of several amperes, suitable for moderate power applications.
4. R_DS(on): It features a low on-state resistance, which means lower power loss and heat generation during operation.
5. Package: Commonly available in SMD (Surface Mount Device) packages like SO-8 to facilitate automated PCB assembly.
6. Applications: Used in power management, load switching, and various consumer electronics.
7. Efficiency: Designed for high-efficiency operation, making it suitable for battery-powered devices.
For precise specifications, always refer to the manufacturer's datasheet as features can vary slightly depending on the exact model and manufacturer.
Pinout
1. Gate (G): This pin is used to control the MOSFET's on/off state. By applying a voltage to the gate, you can control the flow of current between the drain and source.
2. Source (S): This pin is connected to the source terminal of the MOSFET, which is one of the two main current-carrying terminals. In many applications, the source is grounded.
3. Drain (D): This pin is connected to the drain terminal, the other main current-carrying terminal. The current flows from the drain to the source when the MOSFET is in the "on" state.
This MOSFET is typically used in applications requiring efficient switching, such as DC-DC converters and load switches.
Manufacturer
Vishay's components are integral to the performance and reliability of electronic devices in various sectors, including industrial, computing, automotive, consumer, telecommunications, and medical industries. Known for their innovation and quality, Vishay's products are used by numerous high-tech companies worldwide. The company is publicly traded and is one of the world’s largest manufacturers in its category, serving as a major supplier to OEMs and distributors globally.