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SQ2389ES-T1_GE3
+StücklisteMOSFET P-CH 40V 4.1A SOT23-3
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HerstellerVishay Siliconix
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Herstellerteil #SQ2389ES-T1_GE3
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Datenblatt SQ2389ES-T1_GE3 DataSheet
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Paket SOT-23-3
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Auf Lager5753
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 94mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 420 pF @ 20 V |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
1. SQ2389ES-T1_GE3: This could be a code representing a course number, a technical model, or a system version. It often indicates the subject area, version, or sequence within a curriculum or a series.
2. Introduction: This signifies an entry-level overview designed to familiarize readers or students with fundamental concepts, features, or functions related to the subject matter.
3. Content: Generally, an introduction would cover basic principles, objectives, key terms, and foundational knowledge, setting the stage for more advanced study or application.
To know more about "SQ2389ES-T1_GE3," you would typically consult the associated syllabus, manual, or introductory chapter, which would detail the scope, objectives, and core topics addressed.
Equivalent
Features
1. Low Forward Voltage Drop: Offers efficient operation and reduced power loss, making it suitable for low voltage applications.
2. Fast Switching Speed: Ideal for high-frequency applications due to its rapid response to changes in voltage.
3. Surface Mount Package: Allows for compact design and efficient use of space on printed circuit boards (PCBs).
4. High Thermal Efficiency: Designed to operate efficiently under varying thermal conditions, often featuring a low thermal resistance.
5. Reverse Voltage Protection: Provides protection against voltage spikes, enhancing the reliability and longevity of electronic circuits.
6. Current Handling Capability: Supports moderate current levels suitable for typical Schottky diode applications.
These features make the SQ2389ES-T1_GE3 a reliable choice for applications in power management, rectification, and signal demodulation in consumer electronics, automotive, and industrial electronics.
Pinout
As for its function, the SQ2389ES-T1_GE3 is primarily used for switching and amplification in electronic circuits. It is designed to handle high current and voltage levels, making it suitable for power management applications. The MOSFET facilitates efficient power conversion and management in circuits like DC-DC converters, motor drivers, and other power-related applications. It offers low on-resistance and high-speed switching, which enhances the performance and efficiency of the electronic devices in which it is used. For precise pin configurations and technical specifications, referring to the manufacturer's datasheet is recommended.