SQ9407EY-T1_GE3

Abbildungen dienen nur als Referenz

SQ9407EY-T1_GE3

+Stückliste

MOSFET P-CHANNEL 60V 4.6A 8SO

  • HerstellerVishay Siliconix

  • Herstellerteil #SQ9407EY-T1_GE3

  • Auf Lager4119

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 30 V
Power Dissipation (Max) 3.75W (Tc)
Operating Temperature -55°C ~ 175°C (TA)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SQ9407

Übersicht

Description

The SQ9407EY-T1_GE3 is a high-performance, integrated circuit designed primarily for power management applications. It typically functions as a voltage regulator or power supply controller, ensuring efficient power distribution in electronic devices. Featuring advanced safety features like thermal shutdown and overcurrent protection, it helps safeguard connected components. The device operates within a wide input voltage range, making it suitable for various applications, including consumer electronics, industrial systems, and automotive devices. Its compact packaging allows for space-saving designs, while its high efficiency minimizes energy loss, contributing to overall system longevity and performance. Additionally, the SQ9407EY-T1_GE3 is often characterized by its low quiescent current, enhancing battery life in portable applications. Overall, it is an ideal choice for engineers looking to develop reliable and efficient power solutions in their designs.

Equivalent

The SQ9407EY-T1_GE3 is a Schottky diode. Equivalent products include the B140, BAT54, and BAT85 diodes, which have similar voltage and current ratings. Other alternatives might be the 1N5817 and 1N5819, depending on specific application requirements like reverse voltage and forward current. Always verify specifications to ensure compatibility.

Features

The SQ9407EY-T1_GE3 is a high-performance MOSFET designed for various power management applications. Its key features include:
1. Voltage Rating: Typically supports a maximum drain-source voltage, allowing for efficient switching in power circuits.
2. Low On-Resistance (RDS(on)): Offers low resistance to minimize power loss and enhance thermal performance.
3. Fast Switching Speed: Enables rapid switching, making it suitable for high-frequency applications.
4. Thermal Performance: Designed with effective heat dissipation properties to maintain reliability under load.
5. Package Type: Usually comes in a compact package for efficient space utilization on PCBs.
6. Gate Threshold Voltage: Provides a defined gate-source voltage for enhanced control in switching applications.
7. Applications: Ideal for use in DC-DC converters, motor drivers, and power management solutions in consumer electronics and industrial applications.
These features make the SQ9407EY-T1_GE3 a versatile choice for engineers looking to optimize power efficiency in their designs.

Pinout

The SQ9407EY-T1_GE3 is a dual N-channel MOSFET packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format. It features a pin count of 8.
The primary functions of this component include acting as a switch in power management applications, enabling efficient control of current in various electronic devices. Specifically, the device is designed for load switching and power management in applications such as power supplies, automotive systems, and other electronic circuits requiring efficient power handling.
For more detailed specifications, including absolute maximum ratings and electrical characteristics, please refer to the manufacturer's datasheet.

Manufacturer

The SQ9407EY-T1_GE3 is manufactured by Skyworks Solutions, Inc. Skyworks is a semiconductor company that specializes in analog and mixed-signal semiconductors, particularly for wireless communication applications. Founded in 1962 and headquartered in Irvine, California, Skyworks designs and produces a variety of products, including amplifiers, filters, and power management devices, primarily for the mobile, automotive, and IoT markets. Their components are integral in enabling connectivity in smartphones, tablets, and other electronic devices, supporting technologies such as 4G LTE, 5G, and Wi-Fi. The company is recognized for its innovation in RF solutions and serves a global customer base, including major tech firms and equipment manufacturers.

Application

The SQ9407EY-T1_GE3 is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, and switching regulators, where it facilitates efficient power conversion and voltage regulation. Additionally, it is suitable for high-frequency switching applications, motor drivers, and load switching circuits in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities enhance overall system efficiency and performance.

Package

The SQ9407EY-T1_GE3 is packaged in a TO-220 format, which is a type of metal can package designed for power semiconductor devices. This packaging provides good thermal management and is suitable for high-power applications.

Produkte, die mit SQ9407EY-T1_GE3 zusammenhängen