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SQJ409EP-T2_GE3
+StücklisteP-CHANNEL 40-V (D-S) 175C MOSFET
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HerstellerVishay Siliconix
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Herstellerteil #SQJ409EP-T2_GE3
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Datenblatt SQJ409EP-T2_GE3 DataSheet
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Auf Lager14221
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 260 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 11000 pF @ 25 V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The SQJ409EP-T2_GE3 is a specific model of power MOSFETs produced by Vishay Siliconix, a leading electronics manufacturer. These components are typically used in electronic circuits for switching and amplifying electronic signals. The "SQJ409EP" refers to a particular specification and design, while "T2_GE3" often indicates packaging and quality/reliability grade.
Key features of this MOSFET may include:
1. Technology: Utilizes advanced MOSFET technology for efficient performance.
2. Low On-Resistance: Ensures minimal power loss and efficient power management.
3. High-Speed Switching: Facilitates rapid switching speeds crucial for various electronic applications.
4. Thermal Performance: Designed to operate effectively under various temperature conditions.
5. Applications: Commonly used in power management, load switching, motor drives, and other electronic applications where efficient power control is necessary.
For specific characteristics like voltage, current ratings, and other technical specifications, referring to the datasheet provided by the manufacturer is recommended. Such detailed information is essential for designers and engineers to incorporate these components into their projects effectively.
Key features of this MOSFET may include:
1. Technology: Utilizes advanced MOSFET technology for efficient performance.
2. Low On-Resistance: Ensures minimal power loss and efficient power management.
3. High-Speed Switching: Facilitates rapid switching speeds crucial for various electronic applications.
4. Thermal Performance: Designed to operate effectively under various temperature conditions.
5. Applications: Commonly used in power management, load switching, motor drives, and other electronic applications where efficient power control is necessary.
For specific characteristics like voltage, current ratings, and other technical specifications, referring to the datasheet provided by the manufacturer is recommended. Such detailed information is essential for designers and engineers to incorporate these components into their projects effectively.
Equivalent
The SQJ409EP-T2_GE3 is a P-channel MOSFET. Equivalent products would include other P-channel MOSFETs with similar voltage and current ratings. Some potential equivalents are:
1. IRF9540N - by Infineon Technologies.
2. FQP27P06 - by ON Semiconductor.
3. SI7461DP - by Vishay Siliconix (another similar option from the same manufacturer).
4. STP80PF55 - by STMicroelectronics.
Ensure to compare specifications like V_DS, I_D, R_DS(on), and package type for compatibility.
1. IRF9540N - by Infineon Technologies.
2. FQP27P06 - by ON Semiconductor.
3. SI7461DP - by Vishay Siliconix (another similar option from the same manufacturer).
4. STP80PF55 - by STMicroelectronics.
Ensure to compare specifications like V_DS, I_D, R_DS(on), and package type for compatibility.
Features
The SQJ409EP-T2_GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Intertechnology. Key features include:
1. Type: P-Channel MOSFET.
2. Voltage Rating: It operates with a drain-source voltage (V_DS) of up to -40V.
3. Current Rating: Continuous drain current (I_D) is rated up to -11.5A.
4. R_DS(on): It has a low on-resistance, enhancing efficiency and reducing power losses.
5. Package: Available in a PowerPAK SO-8 package, which offers good thermal performance.
6. Applications: Suitable for DC-DC converters, load switch applications, and power management in computing and other electronic devices.
7. Enhanced Performance: Provides fast switching speeds and is optimized for high-efficiency power delivery.
8. Temperature Range: Typically operates within a wide temperature range, making it suitable for various environmental conditions.
These features make it a versatile choice for electronic designs requiring efficient power management and switching capabilities.
1. Type: P-Channel MOSFET.
2. Voltage Rating: It operates with a drain-source voltage (V_DS) of up to -40V.
3. Current Rating: Continuous drain current (I_D) is rated up to -11.5A.
4. R_DS(on): It has a low on-resistance, enhancing efficiency and reducing power losses.
5. Package: Available in a PowerPAK SO-8 package, which offers good thermal performance.
6. Applications: Suitable for DC-DC converters, load switch applications, and power management in computing and other electronic devices.
7. Enhanced Performance: Provides fast switching speeds and is optimized for high-efficiency power delivery.
8. Temperature Range: Typically operates within a wide temperature range, making it suitable for various environmental conditions.
These features make it a versatile choice for electronic designs requiring efficient power management and switching capabilities.
Pinout
The SQJ409EP-T2_GE3 is a power MOSFET manufactured by Vishay Siliconix. It is designed for switch-mode power supply (SMPS), load switching, and other power management applications. This component is housed in a PowerPAK SO-8 package.
The SQJ409EP-T2_GE3 has a total of 8 pins. Here is a brief description of its pin functions:
1. Source (S): Multiple pins serve as the source terminal for the MOSFET. They are typically connected to ground in a circuit.
2. Gate (G): The gate terminal controls the conductivity between the source and drain. It is used to turn the MOSFET on and off.
3. Drain (D): Multiple pins serve as the drain terminal, which is connected to the load or power source.
These pins provide the electrical connections needed for the MOSFET to operate within a circuit, allowing for efficient switching and control of electrical power.
The SQJ409EP-T2_GE3 has a total of 8 pins. Here is a brief description of its pin functions:
1. Source (S): Multiple pins serve as the source terminal for the MOSFET. They are typically connected to ground in a circuit.
2. Gate (G): The gate terminal controls the conductivity between the source and drain. It is used to turn the MOSFET on and off.
3. Drain (D): Multiple pins serve as the drain terminal, which is connected to the load or power source.
These pins provide the electrical connections needed for the MOSFET to operate within a circuit, allowing for efficient switching and control of electrical power.
Manufacturer
The SQJ409EP-T2_GE3 is a part manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay serves a wide range of industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. The company is known for its extensive product portfolio that includes MOSFETs, diodes, integrated circuits, resistors, inductors, and capacitors, among others. Vishay's components are utilized in various electronic devices and systems, contributing to the efficient functioning and innovation of technology across multiple sectors.
Application
The SQJ409EP-T2_GE3 is a power MOSFET typically used in various electronic applications, including power management systems, DC-DC converters, and load switching. It is suitable for use in consumer electronics, automotive systems, industrial equipment, and telecom infrastructure. Its features, such as a low on-resistance and high efficiency, make it ideal for applications requiring efficient power delivery and management. Additionally, it can be used in battery-powered devices where reducing power losses is critical. Its compact packaging and thermal performance also make it suitable for space-constrained applications.
Package
The SQJ409EP-T2_GE3 is a MOSFET transistor typically packaged in a PowerPAK® SO-8 package, which is known for its compact size and excellent thermal performance.
