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SQJ457EP-T1_GE3
+StücklisteMOSFET P-CH 60V 36A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SQJ457EP-T1_GE3
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Datenblatt SQJ457EP-T1_GE3 DataSheet
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Auf Lager23971
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 36A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 25mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3400 pF @ 25 V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
Key features of the SQJ457EP-T1_GE3 include low on-resistance, which improves efficiency by reducing power loss during operation. It also offers high-speed switching capabilities, making it suitable for applications requiring quick response times, such as power management and motor control. The package is often designed to minimize power loss and thermal resistance.
The MOSFET might be used in various applications, including DC/DC converters, power supply circuits, and load switch control in consumer electronics, automotive, and industrial applications. Its compact design is suitable for space-constrained environments.
When integrating the SQJ457EP-T1_GE3 into a circuit, it's important to consider electrical characteristics like threshold voltage, gate charge, and maximum drain current to ensure compatibility and reliable performance.
Equivalent
Features
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: Typically handles a specific range of voltage and current, often suitable for medium power applications.
3. Low On-Resistance: Ensures efficient operation with minimal power loss.
4. Thermal Performance: Designed for effective heat dissipation, often utilizing a package that aids in thermal management.
5. Fast Switching: Features rapid switching capabilities, which is essential for high-speed applications.
6. Package Type: Often available in a compact, surface-mount package, facilitating easy integration into PCB designs.
7. Applications: Commonly used in power management, motor control, and switching power supplies.
For precise specifications like maximum voltage, current, on-resistance, and packaging details, referring to the manufacturer's datasheet is recommended.
Pinout
1. Gate: The gate terminal is used to control the MOSFET's switching operation.
2. Source: The source terminal is typically connected to the ground or reference point in the circuit.
3. Drain: The drain terminal is connected to the load where the current flows when the MOSFET is turned on.
In the PowerPAK SO-8 package, multiple pins are often connected internally to the same terminal to handle higher currents and reduce resistance. For instance, multiple pins might be tied together for the drain and source to improve current carrying capability and heat dissipation.
Please refer to the specific datasheet of the SQJ457EP-T1_GE3 for detailed pin configuration and functions, as there might be variations depending on the manufacturer and application.