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SQJ469EP-T1_GE3
+StücklisteMOSFET P-CH 80V 32A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SQJ469EP-T1_GE3
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Datenblatt SQJ469EP-T1_GE3 DataSheet
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Auf Lager22387
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 32A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 25mOhm @ 10.2A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 155 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5100 pF @ 40 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Übersicht
Description
The "Introduction to SQJ469EP-T1_GE3" likely refers to a specific product, component, or model number, possibly within the fields of electronics, technology, or industrial equipment. The alphanumeric sequence suggests it is a technical or catalog identifier used by manufacturers to categorize and differentiate their offerings.
While specific information about the SQJ469EP-T1_GE3 is not provided here, similar identifiers are often associated with semiconductor devices such as transistors, diodes, or integrated circuits. These components are used in a variety of electronic applications for tasks such as switching, amplification, or voltage regulation.
To gain a comprehensive understanding, one would typically refer to the component's datasheet, which provides detailed technical specifications, performance characteristics, and application notes. Datasheets are crucial for engineers and technicians in selecting the appropriate components for their projects, ensuring compatibility and optimal performance in electronic circuits. For precise details, it's recommended to consult the manufacturer's official documentation or product catalog.
While specific information about the SQJ469EP-T1_GE3 is not provided here, similar identifiers are often associated with semiconductor devices such as transistors, diodes, or integrated circuits. These components are used in a variety of electronic applications for tasks such as switching, amplification, or voltage regulation.
To gain a comprehensive understanding, one would typically refer to the component's datasheet, which provides detailed technical specifications, performance characteristics, and application notes. Datasheets are crucial for engineers and technicians in selecting the appropriate components for their projects, ensuring compatibility and optimal performance in electronic circuits. For precise details, it's recommended to consult the manufacturer's official documentation or product catalog.
Equivalent
The SQJ469EP-T1_GE3 is a Power MOSFET from Vishay used for power management applications. Equivalent products may include similar N-channel MOSFETs from other manufacturers. Possible equivalents are:
1. NXP PSMN0R9-25YLC
2. Infineon BSC027N04LS
3. ON Semiconductor NTD5805NT4G
Ensure to compare specifications like voltage, current ratings, and package type before selecting an alternative.
1. NXP PSMN0R9-25YLC
2. Infineon BSC027N04LS
3. ON Semiconductor NTD5805NT4G
Ensure to compare specifications like voltage, current ratings, and package type before selecting an alternative.
Features
The SQJ469EP-T1_GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is commonly used in electronic devices for switching and amplification purposes. Here are some key features:
1. Type: N-channel MOSFET.
2. Voltage: It typically supports a drain-source voltage (Vds) of around 30V.
3. Current: The continuous drain current (Id) rating is usually around 11A.
4. Rds(on): The on-resistance is low, which enhances efficiency by reducing power loss during conduction.
5. Package: It comes in a PowerPAK® SO-8 package, which is known for its compact size and efficient heat dissipation.
6. Applications: Suitable for use in power management applications, including DC-DC converters, load switches, and motor drives.
7. Thermal Performance: Designed to handle substantial power with effective thermal management.
Always refer to the official datasheet for the most accurate and detailed specifications, as these can vary slightly with different product versions or manufacturing batches.
1. Type: N-channel MOSFET.
2. Voltage: It typically supports a drain-source voltage (Vds) of around 30V.
3. Current: The continuous drain current (Id) rating is usually around 11A.
4. Rds(on): The on-resistance is low, which enhances efficiency by reducing power loss during conduction.
5. Package: It comes in a PowerPAK® SO-8 package, which is known for its compact size and efficient heat dissipation.
6. Applications: Suitable for use in power management applications, including DC-DC converters, load switches, and motor drives.
7. Thermal Performance: Designed to handle substantial power with effective thermal management.
Always refer to the official datasheet for the most accurate and detailed specifications, as these can vary slightly with different product versions or manufacturing batches.
Pinout
The SQJ469EP-T1_GE3 is a power MOSFET produced by Vishay Siliconix. It is housed in a PowerPAK SO-8 package. This MOSFET typically has 8 pins. The primary function of this component is to act as an electronic switch or amplifier in power management applications. It is designed for high-efficiency power conversion and load switching.
Key specifications of the SQJ469EP-T1_GE3 include:
- Pin Count: 8 pins
- Functionality: N-channel MOSFET
- Typical Applications: DC-DC converters, load switching, and power management circuits.
- Features: Low on-resistance, high-efficiency operation, compact packaging.
These MOSFETs are commonly used in computing, telecommunications, and consumer electronics for efficient power management due to their ability to handle significant power levels with minimal power loss.
Key specifications of the SQJ469EP-T1_GE3 include:
- Pin Count: 8 pins
- Functionality: N-channel MOSFET
- Typical Applications: DC-DC converters, load switching, and power management circuits.
- Features: Low on-resistance, high-efficiency operation, compact packaging.
These MOSFETs are commonly used in computing, telecommunications, and consumer electronics for efficient power management due to their ability to handle significant power levels with minimal power loss.
Manufacturer
The SQJ469EP-T1_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company specializes in products such as diodes, MOSFETs, optoelectronics, and various other semiconductor devices, as well as resistors, inductors, and capacitors. Vishay’s components are used in a wide range of industries, including automotive, industrial, computing, consumer electronics, telecommunications, and healthcare. The company is recognized for its innovation and extensive product portfolio, serving as a key supplier for many technology and electronics manufacturers around the world.
Application
The SQJ469EP-T1_GE3 is a MOSFET commonly used in various electronic applications due to its efficiency in switching and amplification. Its primary application areas include power management systems, such as DC-DC converters and voltage regulators, where its ability to handle high current and voltage levels efficiently is crucial. It is also used in motor control circuits for appliances and industrial equipment, as well as in battery management systems for optimizing battery life and performance. Additionally, the SQJ469EP-T1_GE3 can be found in audio amplifiers, automotive electronics, and telecommunications equipment, where reliable and efficient power control is essential.
Package
The SQJ469EP-T1_GE3 is a MOSFET packaged in a PowerPAK SO-8 form factor. This package type is known for its compact size, enhanced thermal performance, and low on-resistance, making it suitable for high-efficiency power management applications.
