Abbildungen dienen nur als Referenz
SQJ962EP-T1-GE3
+StücklisteMOSFET 2N-CH 60V 8A 8SO
-
HerstellerVishay Siliconix
-
Herstellerteil #SQJ962EP-T1-GE3
-
Datenblatt SQJ962EP-T1-GE3 DataSheet
-
Paket PowerPAK® SO-8 Dual
-
Auf Lager8169
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 4.3A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 475pF @ 25V |
| Power - Max | 25W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
