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SQM120P06-07L_GE3
+StücklisteMOSFET P-CH 60V 120A TO263
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HerstellerVishay Siliconix
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Herstellerteil #SQM120P06-07L_GE3
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Datenblatt SQM120P06-07L_GE3 DataSheet
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Auf Lager12595
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.7mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 14280 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
Übersicht
Description
The SQM120P06-07L_GE3 is a specific model of a power MOSFET, which is a type of transistor used for switching and amplifying electronic signals in various applications. This particular model is known for its efficiency and reliability in high-power applications. It typically features a low on-resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency power conversion and management tasks.
Key specifications likely include a maximum drain-source voltage, continuous drain current, and a threshold voltage, all of which influence its performance in circuits. The component is housed in a specific package type, such as TO-220 or D2PAK, which affects its heat dissipation capabilities and suitability for different mounting methods.
This MOSFET is often used in applications like power supplies, motor drives, and amplifiers. It is valued for its fast switching speed and robustness, making it a go-to component for engineers designing systems that require efficient power handling. Always refer to the manufacturer's datasheet for precise specifications and usage guidelines.
Key specifications likely include a maximum drain-source voltage, continuous drain current, and a threshold voltage, all of which influence its performance in circuits. The component is housed in a specific package type, such as TO-220 or D2PAK, which affects its heat dissipation capabilities and suitability for different mounting methods.
This MOSFET is often used in applications like power supplies, motor drives, and amplifiers. It is valued for its fast switching speed and robustness, making it a go-to component for engineers designing systems that require efficient power handling. Always refer to the manufacturer's datasheet for precise specifications and usage guidelines.
Equivalent
The SQM120P06-07L_GE3 is a P-channel MOSFET. Equivalent products would be those with similar voltage, current ratings, and package type. Some possible equivalents might include:
1. Infineon BSC050P06NS3 G
2. ON Semiconductor FDD5614P
3. Vishay Si7465DP
4. STMicroelectronics STP55PF06
Ensure specifications such as voltage, current, Rds(on), and package match your requirements when selecting an equivalent. Always verify with datasheets for precise compatibility.
1. Infineon BSC050P06NS3 G
2. ON Semiconductor FDD5614P
3. Vishay Si7465DP
4. STMicroelectronics STP55PF06
Ensure specifications such as voltage, current, Rds(on), and package match your requirements when selecting an equivalent. Always verify with datasheets for precise compatibility.
Features
The SQM120P06-07L_GE3 is a P-channel MOSFET designed for various electronic applications. Here are its key features:
1. Polarity: P-channel.
2. Voltage Rating: It typically has a drain-source voltage (V_ds) rating of -60V.
3. Current Rating: The continuous drain current (I_d) is generally rated at around -120A.
4. Rds(on): The on-resistance is low, often around 7 mΩ, which ensures efficient performance with minimal power loss.
5. Package: It usually comes in a D^2PAK (TO-263) package, which is suitable for surface-mount technology.
6. Thermal Performance: The package and design provide good thermal management, essential for handling high currents.
7. Application: Suitable for switching applications, power management, and inverters.
8. Efficiency: Designed to provide high efficiency in power delivery systems.
These features make the SQM120P06-07L_GE3 a robust choice for high-power and efficient electronic circuits. Always check the detailed datasheet for precise specifications and confirm compatibility with your application.
1. Polarity: P-channel.
2. Voltage Rating: It typically has a drain-source voltage (V_ds) rating of -60V.
3. Current Rating: The continuous drain current (I_d) is generally rated at around -120A.
4. Rds(on): The on-resistance is low, often around 7 mΩ, which ensures efficient performance with minimal power loss.
5. Package: It usually comes in a D^2PAK (TO-263) package, which is suitable for surface-mount technology.
6. Thermal Performance: The package and design provide good thermal management, essential for handling high currents.
7. Application: Suitable for switching applications, power management, and inverters.
8. Efficiency: Designed to provide high efficiency in power delivery systems.
These features make the SQM120P06-07L_GE3 a robust choice for high-power and efficient electronic circuits. Always check the detailed datasheet for precise specifications and confirm compatibility with your application.
Pinout
The SQM120P06-07L_GE3 is a P-channel MOSFET produced by Vishay Siliconix. It typically comes in a D2PAK (TO-263) package, which has 3 pins plus a tab. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET by applying the appropriate voltage to turn it on or off.
2. Drain (D): The current flows out through this pin when the MOSFET is in the 'on' state.
3. Source (S): The current enters the MOSFET through this pin.
4. Tab (also Drain): The metal tab on the package is often connected to the drain terminal for heat dissipation.
The primary function of the SQM120P06-07L_GE3 is to serve as a switch or amplifier in electronic circuits, handling power applications due to its high current and voltage ratings. It is commonly used in applications such as power management, motor control, and DC-DC converters.
1. Gate (G): This pin is used to control the MOSFET by applying the appropriate voltage to turn it on or off.
2. Drain (D): The current flows out through this pin when the MOSFET is in the 'on' state.
3. Source (S): The current enters the MOSFET through this pin.
4. Tab (also Drain): The metal tab on the package is often connected to the drain terminal for heat dissipation.
The primary function of the SQM120P06-07L_GE3 is to serve as a switch or amplifier in electronic circuits, handling power applications due to its high current and voltage ratings. It is commonly used in applications such as power management, motor control, and DC-DC converters.
Manufacturer
The SQM120P06-07L_GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a globally recognized company known for its production of discrete semiconductors and passive electronic components. These products are used in a wide array of industries including automotive, industrial, computing, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's portfolio includes products such as transistors, diodes, and optoelectronics, as well as capacitors, resistors, and inductors. As a leader in the electronic components sector, Vishay focuses on innovation and quality to meet the needs of its diverse customer base.
Application
The SQM120P06-07L_GE3 is a power MOSFET designed for various applications, primarily focusing on high-efficiency electronic systems. Its application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power conversion.
2. Automotive Systems: Suitable for electronic control units, motor drives, and battery management systems.
3. Consumer Electronics: Utilized in power supply units, battery chargers, and LED drivers.
4. Industrial Equipment: Employed in motor controllers, inverters, and power tools.
5. Renewable Energy Systems: Applicable in solar inverters and energy storage systems for improved energy efficiency.
These applications benefit from the MOSFET's low on-resistance and high current-carrying capability.
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power conversion.
2. Automotive Systems: Suitable for electronic control units, motor drives, and battery management systems.
3. Consumer Electronics: Utilized in power supply units, battery chargers, and LED drivers.
4. Industrial Equipment: Employed in motor controllers, inverters, and power tools.
5. Renewable Energy Systems: Applicable in solar inverters and energy storage systems for improved energy efficiency.
These applications benefit from the MOSFET's low on-resistance and high current-carrying capability.
Package
The SQM120P06-07L_GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) in a DPAK package type. DPAK is a surface-mount package that is commonly used for power transistors and features a compact design suitable for high-efficiency applications.
