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STB18NM60N
+StücklisteMOSFET N-CH 600V 13A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB18NM60N
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Datenblatt STB18NM60N DataSheet
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Auf Lager7280
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 285mOhm @ 6.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1000 pF @ 50 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
