STB21N90K5

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STB21N90K5

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MOSFET N-CH 900V 18.5A D2PAK

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH5™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 18.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 299mOhm @ 9A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 43 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1645 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Übersicht

Description

The STB21N90K5 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage, high-efficiency applications. Key features include:
- Voltage Rating: 900V, suitable for robust power switching.
- Current Handling: Up to 21A (continuous drain current).
- Low On-Resistance (RDS(on)): 0.35Ω (max), reducing conduction losses.
- Fast Switching: Optimized for high-speed performance in power supplies, inverters, and motor drives.
- Avalanche-Rugged: Enhanced reliability under harsh conditions.
- Package: TO-263 (D²PAK), offering good thermal performance.
Ideal for SMPS, lighting, and industrial applications, it balances efficiency and durability. Always refer to the datasheet for detailed specs and application guidelines.

Equivalent

Equivalent products to the STB21N90K5 (900V, 21A MOSFET) include:
- STP21N90K5 (similar specs, TO-220 package)
- IRFB21N90K (Infineon, 900V, 21A)
- FDPF21N90NT (Fairchild/ON Semi, 900V, 21A)
- IXFH21N90 (IXYS, 900V, 21A)
Check datasheets for exact compatibility in your circuit.

Features

The STB21N90K5 is an N-channel MOSFET with the following key features:
- Voltage Rating: 900V, suitable for high-voltage applications.
- Current Rating: 21A (continuous drain current).
- Low On-Resistance: 0.35Ω (typ.) at 10V gate drive, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Energy Rated: Enhances reliability in rugged conditions.
- Low Gate Charge (Qg): Improves efficiency in high-frequency circuits.
- TO-263 (D²PAK) Package: Good thermal performance for power applications.
Ideal for SMPS, motor drives, and inverters where high voltage and efficiency are critical.

Manufacturer

The STB21N90K5 is a power MOSFET manufactured by STMicroelectronics, a multinational semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STB21N90K5 is part of their MDmesh™ K5 series, optimized for high-efficiency power conversion applications.

Package

The STB21N90K5 is a power MOSFET housed in a TO-263 (D²PAK) surface-mount package. This package type offers efficient thermal performance and is commonly used in high-power applications. It features a compact design with a large exposed pad for heat dissipation, making it suitable for automotive, industrial, and switching power supplies.

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