STB28N60M2

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STB28N60M2

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MOSFET N-CH 600V 22A D2PAK

  • HerstellerSTMikroelektronik

  • Herstellerteil #STB28N60M2

  • Auf Lager2035

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Attribut Wert
Series MDmesh™ II Plus
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 22A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 150mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 36 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1440 pF @ 100 V
PowerDissipation(Max) 170W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263 (D2PAK)
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BaseProductNumber STB28

Übersicht

Description

The STB28N60M2 is a N-channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 28A. It is part of the STMicroelectronics STB series, known for low on-resistance (R_DS(on)), which enhances efficiency in power conversion and switching applications.
This MOSFET is suitable for various applications, including switch-mode power supplies, motor drivers, and power management systems. It offers robust thermal performance, with a maximum junction temperature of 150°C, making it ideal for high-reliability designs.
The device features fast switching capabilities, enabling it to operate efficiently in high-frequency applications. It is packaged in a TO-220 format, which facilitates effective heat dissipation. Overall, the STB28N60M2 is a versatile component for engineers looking for reliable, high-performance MOSFET solutions in demanding electrical environments.

Equivalent

The STB28N60M2 is a 600V N-channel MOSFET. Equivalent products include the IRFHC30, FDP28N60, and the IXFH28N60. Other alternatives may come from different manufacturers like Fairchild, Vishay, and ON Semiconductor, but ensure to verify specifications like RDS(on), current rating, and package type for compatibility in your application.

Features

The STB28N60M2 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
- Voltage Rating: Maximum drain-source voltage (V_DS) of 600V.
- Continuous Drain Current: Up to 28A, allowing for effective current handling.
- R_DS(on): Low on-resistance of approximately 0.24Ω at V_GS = 10V, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): Ranges from 2V to 4V, ensuring reliable switching behavior.
- Fast Switching Speed: Suitable for high-frequency applications.
- Thermal Resistance: Low thermal resistance for effective heat dissipation.
- Package: Available in an TO-220 package, facilitating heat management and ease of mounting.
This MOSFET is ideal for applications such as switch mode power supplies (SMPS), industrial motor drives, and power management circuits, providing robustness and high efficiency in demanding environments.

Pinout

The STB28N60M2 is a high voltage N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It completes the circuit by allowing current to flow back to the source when the MOSFET is conducting.
The STB28N60M2 is designed for applications requiring high voltage and current, making it suitable for use in power supplies, motor drives, and other high-power switching applications.

Manufacturer

The STB28N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its broad portfolio of electronic components, including microcontrollers, power management ICs, analog devices, and various types of transistors and diodes.
Founded in 1987 through the merger of two companies, STMicroelectronics is headquartered in Geneva, Switzerland, and operates in multiple countries worldwide. The company serves a wide range of industries, including automotive, industrial, consumer electronics, and telecommunications, making it a significant player in the semiconductor market.
The STB28N60M2 is a power MOSFET designed for applications requiring high voltage and current handling, often used in power supplies, motor controls, and other areas where efficient energy management is critical. STMicroelectronics focuses on innovation and sustainability, providing solutions that enhance energy efficiency and performance in electronic systems.

Application

The STB28N60M2 is a high-performance N-channel MOSFET primarily used in power applications. It is suitable for:
1. Switching Power Supplies: Efficiently managing power conversion.
2. Motor Control: Driving DC motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers and dimmers.
4. Inverters: For renewable energy systems like solar inverters.
5. Class D Amplifiers: For audio amplification.
6. Power Management Circuits: In various electronic devices.
Its high voltage and current ratings make it ideal for these applications.

Package

The STB28N60M2 is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for high-power applications in power transistors.

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