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STB9NK80Z
+StücklisteMOSFET N-CH 800V 5.2A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB9NK80Z
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Auf Lager6979
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Spezifikationen
| Attribut | Wert |
| Series | SuperMESH™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 5.2A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.8Ohm @ 2.6A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1138 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB9 |
Übersicht
Description
The device is typically used in applications such as motor drives, power supplies, and inverters. Its high breakdown voltage ensures reliability in demanding environments, while its package (usually TO-220) allows for effective thermal management.
Key specifications include a maximum gate-source voltage of ±20V, a total gate charge of around 30nC, and a threshold voltage (V_GS(th)) in the range of 2 to 4V. Overall, the STB9NK80Z is a robust component ideal for engineers seeking efficient, high-voltage solutions in their designs.
Equivalent
Features
1. Voltage Rating: Capable of handling up to 800V, making it suitable for high-voltage circuits.
2. Current Rating: Can support continuous drain current up to 9A, allowing for significant power handling.
3. Low RDS(on): Features a low on-state resistance, typically around 0.9 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for high-speed operation, making it suitable for switching applications in power supplies and converters.
5. Thermal Resistance: Good thermal performance helps manage heat dissipation effectively.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility for different PCB designs.
7. Gate Threshold Voltage: Suitable for standard drive voltages, enhancing compatibility with various circuits.
Overall, the STB9NK80Z is an efficient, high-performance MOSFET ideal for applications in power management and conversion.
Pinout
1. Gate (G): This pin controls the MOSFET operation and is used to switch the device on or off by applying a voltage.
2. Drain (D): This is the terminal through which the current flows out when the MOSFET is in the on state.
3. Source (S): This terminal is where the current enters when the MOSFET is conducting.
The STB9NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 9A. It is commonly used in power switching applications and offers low on-resistance, making it efficient for various electronic circuits.
Manufacturer
Application
1. Switching Power Supplies: Efficiently managing power conversion in DC-DC converters and inverters.
2. Motor Control: Operating in driving circuits for electric motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers for efficient dimming and control.
4. Heating Systems: Employed in heating elements and resistive load switching.
5. Automotive Applications: Suitable for power distribution and management in vehicles.
Its high voltage rating and low on-resistance make it ideal for these applications.