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STD1HNC60T4
+StücklisteMOSFET N-CH 600V 2A DPAK
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HerstellerSTMikroelektronik
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Herstellerteil #STD1HNC60T4
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Datenblatt STD1HNC60T4 DataSheet
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Auf Lager4472
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerMESH™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5Ohm @ 1A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 228 pF @ 25 V |
| PowerDissipation(Max) | 50W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
