Abbildungen dienen nur als Referenz
STD3NM60-1
+StücklisteMOSFET N-CH 600V 3A IPAK
-
HerstellerSTMikroelektronik
-
Herstellerteil #STD3NM60-1
-
Datenblatt STD3NM60-1 DataSheet
-
Auf Lager4567
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 324 pF @ 25 V |
| PowerDissipation(Max) | 42W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | I-PAK |
