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STD80N6F7
+StücklisteMOSFET N-CH 60V 40A DPAK
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HerstellerSTMikroelektronik
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Herstellerteil #STD80N6F7
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Auf Lager5991
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Spezifikationen
| Attribut | Wert |
| Series | STripFET™ F7 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 8mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1600 pF @ 30 V |
| PowerDissipation(Max) | 100W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252 (DPAK) |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD80 |
Übersicht
Description
The STD80N6F7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications in power electronics and switching. It typically features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) rating of 60A, making it suitable for various power conversion tasks, including DC-DC converters, motor drives, and power management systems.
Key specifications often include a low on-resistance (R_DS(on)) for improved efficiency, fast switching capabilities, and thermal performance to handle significant power levels. It is commonly used in applications that require high efficiency and reliability, such as renewable energy systems, electric vehicles, and industrial automation.
The STD80N6F7 is encapsulated in a TO-220 package, facilitating efficient heat dissipation. When using this MOSFET, proper thermal management and gate drive considerations are essential to ensure optimal performance and longevity in circuit designs.
Key specifications often include a low on-resistance (R_DS(on)) for improved efficiency, fast switching capabilities, and thermal performance to handle significant power levels. It is commonly used in applications that require high efficiency and reliability, such as renewable energy systems, electric vehicles, and industrial automation.
The STD80N6F7 is encapsulated in a TO-220 package, facilitating efficient heat dissipation. When using this MOSFET, proper thermal management and gate drive considerations are essential to ensure optimal performance and longevity in circuit designs.
Equivalent
The STD80N6F7 is an N-channel MOSFET, and its equivalent products include the IRF320, STP80NF6, and BUK956-100A. Always check the specific datasheets for detailed specifications such as voltage, current ratings, and package types to ensure compatibility for your application.
Features
The STD80N6F7 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 80V, making it suitable for various power management tasks.
2. Current Handling: With a continuous drain current (Id) rating of 80A at 25°C, it is capable of managing high power loads.
3. RDS(on): The device features a low on-resistance, typically around 6mΩ, which minimizes power loss and improves thermal performance.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) range of 2-4V, allowing for efficient drive from standard logic levels.
5. Package: Typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Applications: Ideal for use in DC-DC converters, motor drivers, and power management circuits.
Overall, the STD80N6F7 is a robust choice for applications requiring high efficiency and reliable performance in power electronics.
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 80V, making it suitable for various power management tasks.
2. Current Handling: With a continuous drain current (Id) rating of 80A at 25°C, it is capable of managing high power loads.
3. RDS(on): The device features a low on-resistance, typically around 6mΩ, which minimizes power loss and improves thermal performance.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) range of 2-4V, allowing for efficient drive from standard logic levels.
5. Package: Typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Applications: Ideal for use in DC-DC converters, motor drivers, and power management circuits.
Overall, the STD80N6F7 is a robust choice for applications requiring high efficiency and reliable performance in power electronics.
Pinout
The STD80N6F7 is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The STD80N6F7 is designed for high-speed switching and can handle high currents, making it suitable for various power applications. Its typical specifications include a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 80A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The STD80N6F7 is designed for high-speed switching and can handle high currents, making it suitable for various power applications. Its typical specifications include a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 80A.
Manufacturer
The STD80N6F7 is a power MOSFET manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a broad range of semiconductor solutions, including analog and digital integrated circuits, microcontrollers, and power devices. The company serves various industries such as automotive, industrial, consumer electronics, and communications, focusing on innovative technologies that enhance energy efficiency and sustainability. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide, offering a diverse portfolio of products tailored to meet the demands of a wide array of applications.
Application
The STD80N6F7 is an N-channel MOSFET primarily used in power electronics applications. Key areas include:
1. Switching Power Supplies: Enhances efficiency in converting voltage levels.
2. Motor Drivers: Controls DC, stepper, and brushless motors in industrial and consumer applications.
3. DC-DC Converters: Facilitates efficient energy transfer in various electronic devices.
4. Inverters: Used in renewable energy systems, such as solar panels and wind turbines.
5. Audio Amplifiers: Improves performance in high-power audio applications.
Its high current capacity and low on-resistance make it suitable for these applications.
1. Switching Power Supplies: Enhances efficiency in converting voltage levels.
2. Motor Drivers: Controls DC, stepper, and brushless motors in industrial and consumer applications.
3. DC-DC Converters: Facilitates efficient energy transfer in various electronic devices.
4. Inverters: Used in renewable energy systems, such as solar panels and wind turbines.
5. Audio Amplifiers: Improves performance in high-power audio applications.
Its high current capacity and low on-resistance make it suitable for these applications.
Package
The STD80N6F7 is typically packaged in a TO-220 package type, which is a type of three-lead semiconductor package known for good thermal performance and ease of mounting.
