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STD8N65M5
+StücklisteMOSFET N-CH 650V 7A DPAK
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HerstellerSTMikroelektronik
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Herstellerteil #STD8N65M5
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Datenblatt STD8N65M5 DataSheet
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Auf Lager7683
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 690 pF @ 100 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Übersicht
Description
Key features of the STD8N65M5 include low on-resistance, fast switching speed, and high avalanche ruggedness. The device is built with advanced trench gate structure technology, which enhances its efficiency and thermal performance. It is typically used in applications where high efficiency and reliability are crucial, such as in lighting systems, motor drivers, and industrial power supplies.
The STD8N65M5 is available in various package types, such as DPAK and TO-220, which provide flexibility in terms of mounting and thermal management.
Equivalent
1. IRFBC40 by Infineon Technologies
2. SPA11N60C3 by Infineon Technologies
3. FQA8N60C by ON Semiconductor
4. AOT8N60 by Alpha & Omega Semiconductor
Note that while these products may have similar specifications, it is essential to compare their datasheets for detailed compatibility.
Features
1. Voltage and Current Ratings: It supports a drain-source voltage (V_ds) of 650V and a continuous drain current (I_d) of 8A, making it suitable for high-power applications.
2. R_DS(on): It has a low on-resistance, which helps reduce power losses during operation.
3. Package Type: Available in DPAK packaging, which is compact and supports efficient heat dissipation.
4. Gate Charge: Features a low gate charge that ensures efficient switching and reduced power consumption.
5. Applications: Ideal for use in power supplies, motor drives, and various industrial applications due to its robustness and efficiency.
6. Temperature Range: Designed to operate over a wide temperature range, ensuring reliability in diverse environments.
7. Enhanced Performance: The device provides improved dv/dt capability and high avalanche energy rating.
These features make the STD8N65M5 suitable for a range of high-voltage power management applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows the MOSFET to conduct between the drain and source.
2. Drain (D): This pin is the main current flow outlet when the MOSFET is turned on.
3. Source (S): This pin is the main current flow inlet, connected to the ground or negative side of the power supply when used in a switching application.
Additionally, the DPAK package might also include a tab, which is usually connected to the drain for heat dissipation purposes. The STD8N65M5 is commonly used in applications requiring high voltage handling and efficient switching, such as power converters and motor controllers.
Manufacturer
Application
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: In industrial and consumer motor drive systems for efficient motor operation.
3. Lighting Systems: Particularly in LED drivers and other lighting control applications.
4. Inverters and Converters: Used in solar inverters, UPS systems, and other power inverter applications.
5. Automotive Electronics: For various electronic control units and power management functions.
6. Audio Amplifiers: In high-power audio amplification circuits for improved performance.
These applications leverage the MOSFET's efficiency, thermal performance, and reliability.