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STF18NM60N
+StücklisteMOSFET N-CH 600V 13A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF18NM60N
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Datenblatt STF18NM60N DataSheet
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Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ II |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 285mOhm @ 6.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1000 pF @ 50 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
| Package/Case | TO-220-3 Full Pack |
| BaseProductNumber | STF18 |
Übersicht
Description
This MOSFET also has a fast switching speed, which is beneficial for high-frequency applications. Its thermal performance is optimized with a maximum junction temperature of 150°C, allowing for reliable operation under demanding conditions. The device is housed in a TO-220 package, providing ease of heat dissipation.
Key specifications include a gate threshold voltage typically ranging from 2V to 4V and a maximum gate-source voltage of ±20V. The STF18NM60N is ideal for designers looking for a robust, efficient solution for high-voltage switching applications.
Equivalent
Features
- Voltage Rating: Capable of withstanding a maximum drain-source voltage (Vds) of 600V.
- Current Rating: It can handle a continuous drain current (Id) of up to 18A, making it suitable for various power applications.
- Rds(on): Low on-resistance of approximately 0.25 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency by reducing conduction losses.
- Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and reliability in power circuits.
- Switching Speed: Fast switching capabilities suitable for high-frequency applications.
- Package Type: Available in TO-220 and DPAK packages, facilitating easy mounting and integration into circuits.
These features make the STF18NM60N ideal for use in power supplies, motor drives, and other high-voltage switching applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or a lower potential in the circuit. It serves as the return path for the current flowing from the drain.
The STF18NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and can handle a continuous drain current (I_D) of up to 18A, making it suitable for various power management applications.
Manufacturer
STMicroelectronics is known for its commitment to innovation and sustainability, focusing on developing technologies that enhance energy efficiency and improve performance across different applications. The STF18NM60N itself is a high-voltage N-channel MOSFET designed for power applications, showcasing the company's expertise in power management solutions. The company operates worldwide, providing products that cater to the growing demands of modern electronics and smart technologies.
Application
1. Switching Power Supplies: Utilized in DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and automotive motor control systems for driving electric motors.
3. Inverters: Applied in renewable energy systems, such as solar inverters and UPS systems.
4. Lighting Control: Used in LED drivers and dimmers for efficient lighting solutions.
5. Audio Amplifiers: Integrated into audio power amplifiers for high-performance sound systems.
Its high voltage and current handling capabilities make it suitable for these applications.