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STF24NM60N
+StücklisteMOSFET N-CH 600V 17A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF24NM60N
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Datenblatt STF24NM60N DataSheet
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Auf Lager19970
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 50 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
The STF24NM60N also includes features like fast recovery body diode and avalanche ruggedness, which contribute to its reliability in demanding environments. It typically comes in a TO-220 package, which provides a good balance between thermal performance and compact size. This MOSFET is often used in applications that require low power loss and efficient voltage regulation, delivering improved performance in both consumer and industrial electronics.
Equivalent
Features
1. Drain-Source Voltage (Vds): 600V, which makes it suitable for high-voltage applications.
2. Continuous Drain Current (Id): 20A, allowing it to handle moderate current loads.
3. RDS(on): Max 0.18 Ohms at 10V gate-source voltage, indicating low on-resistance for efficient operation.
4. Total Gate Charge (Qg): Approximately 52nC, which ensures fast switching speeds.
5. Package Type: TO-220FP, providing good thermal performance and easy mounting.
6. Thermal Resistance Junction-to-Ambient (RθJA): Designed for effective heat dissipation.
7. Enhanced ESD Capability: Robust against electrostatic discharge, enhancing reliability.
8. Applications: Ideal for use in power supplies, motor control, lighting, and other high-voltage, high-efficiency environments.
9. Technology: Utilizes MDmesh technology for improved performance over standard MOSFETs.
These features make the STF24NM60N a versatile and reliable choice for various industrial and consumer electronics applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): Current flows through this pin from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the pin through which current exits the MOSFET after flowing from the drain.
Overall, the STF24NM60N is designed for high-efficiency power switching applications.
Manufacturer
Application
1. Power Supply Units: Used in switching power supplies and adapters for efficient energy conversion.
2. Motor Control: Employed in motor drives for industrial and consumer applications.
3. Lighting: Utilized in LED lighting systems for efficient power management.
4. Inverters: Suitable for use in inverter circuits in renewable energy systems like solar inverters.
5. Audio Amplifiers: Helps in designing efficient audio amplifier circuits.
6. Battery Chargers: Used in fast charging circuits for electronic devices.
These applications leverage the MOSFET's ability to handle high voltages and current efficiently.