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STF26NM60N
+StücklisteMOSFET N-CH 600V 20A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF26NM60N
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Datenblatt STF26NM60N DataSheet
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Paket TO-220FP
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 165mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1800 pF @ 50 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
Constructed with STMicroelectronics' advanced technologies, it offers low on-state resistance (R_DS(on)) to minimize power loss. The STF26NM60N is housed in a TO-220 package, which provides good thermal performance, allowing it to handle substantial power levels. It also features built-in zener protection, enhancing its robustness against voltage spikes.
The device is typically used in applications requiring high-speed switching and high-voltage handling, including industrial equipment, lighting systems, and home appliances. Its reliability and efficiency make it a popular choice for engineers designing circuits that demand high performance and durability.
Equivalent
1. IRFP460A (from Infineon)
2. FQA26N60 (from ON Semiconductor)
3. FDPF26N60NZ (from ON Semiconductor)
4. IPA60R199CP (from Infineon)
5. AOTF26N60 (from Alpha & Omega Semiconductor)
Ensure compatibility by checking the specific parameters like voltage rating, current rating, and package type.
Features
1. Drain-Source Voltage (Vds): 600V, allowing for high voltage applications.
2. Continuous Drain Current (Id): Up to 26A, enabling robust current handling.
3. Rds(on): Low on-resistance of 0.18 ohms, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 3V to 5V, providing stable gate operation.
5. Total Gate Charge (Qg): 48nC, supporting fast switching speeds.
6. Fast Switching: Suitable for high-speed applications due to low gate charge and capacitance.
7. Package Type: TO-220, facilitating easy mounting and heat dissipation.
8. Temperature Range: Operates effectively across a wide temperature range.
These features make the STF26NM60N ideal for use in inverters, motor drivers, power supplies, and other applications requiring high efficiency and reliability.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET's conduction state. By applying a voltage to this pin, the MOSFET can be turned on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is turned on. It is connected to the load in most circuit configurations.
3. Source (S): The source terminal is the origin of the charge carriers (electrons for N-channel) that flow through the drain when the MOSFET is conducting.
These MOSFETs are commonly used for switching and amplification in electronic circuits due to their efficiency and fast switching capabilities.
Manufacturer
Application
1. Power Supply Units: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Employed in motor drives and controllers due to its fast switching and low on-resistance.
3. Lighting: Used in electronic ballasts for fluorescent lamps and LED drivers for efficient lighting control.
4. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
5. Consumer Electronics: Found in various electronic devices for power management and distribution.
These applications benefit from the MOSFET's efficiency, thermal performance, and reliability.