Abbildungen dienen nur als Referenz
STF28N60M2
+StücklisteMOSFET N-CH 600V 24A TO220FP
-
HerstellerSTMikroelektronik
-
Herstellerteil #STF28N60M2
-
Auf Lager9327
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Base Product Number | STF28 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 100 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
Übersicht
Description
The STF28N60M2 is a high-performance N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 28A. It is ideal for use in high-voltage switching applications, such as power supplies, motor drives, and inverters.
Key specifications include a low on-resistance (Rds(on)) of approximately 0.28 ohms, which helps minimize power loss during operation. The MOSFET also offers fast switching capabilities, making it suitable for high-frequency applications.
The STF28N60M2 is housed in a TO-220 package, allowing for efficient thermal management and easy mounting onto heatsinks. Its robust design and reliability make it a popular choice among engineers and designers in various industrial and consumer electronics applications.
Overall, the STF28N60M2 is an effective solution for demanding power management scenarios, providing efficiency and performance in a compact form factor.
Key specifications include a low on-resistance (Rds(on)) of approximately 0.28 ohms, which helps minimize power loss during operation. The MOSFET also offers fast switching capabilities, making it suitable for high-frequency applications.
The STF28N60M2 is housed in a TO-220 package, allowing for efficient thermal management and easy mounting onto heatsinks. Its robust design and reliability make it a popular choice among engineers and designers in various industrial and consumer electronics applications.
Overall, the STF28N60M2 is an effective solution for demanding power management scenarios, providing efficiency and performance in a compact form factor.
Equivalent
The STF28N60M2 is a 600V, 28A N-channel MOSFET. Equivalent products include:
1. STP28N60M2 - Similar specifications with slight variations in package.
2. IRFHC60 - Comparable voltage and current ratings.
3. SIHF28N60 - Suitable for similar applications.
4. FQP28N60L - Shares similar characteristics.
Always verify the datasheets for specific parameters to ensure compatibility.
1. STP28N60M2 - Similar specifications with slight variations in package.
2. IRFHC60 - Comparable voltage and current ratings.
3. SIHF28N60 - Suitable for similar applications.
4. FQP28N60L - Shares similar characteristics.
Always verify the datasheets for specific parameters to ensure compatibility.
Features
The STF28N60M2 is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Current Rating: 28A continuous drain current (I_D) at 25°C.
- R_DS(on): Low on-resistance, typically around 0.28 ohms, enhancing efficiency.
- Gate Threshold Voltage: V_GS(th) ranges between 2V to 4V, suitable for low-voltage driving.
- Fast Switching Speed: Designed for high-speed switching applications, minimizing losses.
- Thermal Resistance: Low junction-to-case thermal resistance for better heat dissipation.
- Package Type: Available in TO-220 package, offering easy mounting and heat management.
- Applications: Ideal for use in switch mode power supplies (SMPS), inverters, and motor drivers.
These characteristics make the STF28N60M2 suitable for a range of power electronics applications requiring high efficiency and reliability.
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Current Rating: 28A continuous drain current (I_D) at 25°C.
- R_DS(on): Low on-resistance, typically around 0.28 ohms, enhancing efficiency.
- Gate Threshold Voltage: V_GS(th) ranges between 2V to 4V, suitable for low-voltage driving.
- Fast Switching Speed: Designed for high-speed switching applications, minimizing losses.
- Thermal Resistance: Low junction-to-case thermal resistance for better heat dissipation.
- Package Type: Available in TO-220 package, offering easy mounting and heat management.
- Applications: Ideal for use in switch mode power supplies (SMPS), inverters, and motor drivers.
These characteristics make the STF28N60M2 suitable for a range of power electronics applications requiring high efficiency and reliability.
Pinout
The STF28N60M2 is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the current flows out of the device when it is in the ON state.
3. Source (S): This pin is the reference point for the gate voltage and the terminal through which current enters the MOSFET.
4. Body Diode: While not a separate pin, the device includes an intrinsic body diode between the drain and source, which can conduct current in the reverse direction when the MOSFET is off.
The STF28N60M2 is designed for high-voltage applications, rated for a maximum drain-source voltage of 600V and a continuous drain current of 28A.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the current flows out of the device when it is in the ON state.
3. Source (S): This pin is the reference point for the gate voltage and the terminal through which current enters the MOSFET.
4. Body Diode: While not a separate pin, the device includes an intrinsic body diode between the drain and source, which can conduct current in the reverse direction when the MOSFET is off.
The STF28N60M2 is designed for high-voltage applications, rated for a maximum drain-source voltage of 600V and a continuous drain current of 28A.
Manufacturer
The STF28N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is known for its wide range of electronic components, including microcontrollers, sensors, power management devices, and discrete components like power MOSFETs. The company serves various sectors, including automotive, industrial, consumer electronics, and telecommunications, focusing on innovation and sustainability in semiconductor solutions. With a strong emphasis on research and development, STMicroelectronics plays a significant role in advancing technology across multiple applications.
Application
The STF28N60M2 is a N-channel MOSFET designed for high-voltage applications. It is commonly used in power electronics, particularly in switch-mode power supplies, DC-DC converters, and motor drives. Its features make it suitable for applications in renewable energy systems, such as solar inverters and wind power converters. Additionally, it can be utilized in industrial automation for controlling motors and other loads, as well as in consumer electronics for efficient power management. Its high voltage and current ratings enable reliable operation in demanding environments.
Package
The STF28N60M2 is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
