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STF5NK100Z
+StücklisteMOSFET N-CH 1000V 3.5A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF5NK100Z
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Datenblatt STF5NK100Z DataSheet
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Auf Lager10943
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH3™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.7Ohm @ 1.75A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1154 pF @ 25 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
The device is enclosed in a TO-220FP package, which provides high thermal conductivity and electrical isolation, making it suitable for compact and heat-sensitive designs. The STF5NK100Z is commonly used in power supplies, lighting circuits, and other applications requiring efficient energy conversion and management at elevated voltages.
Its design ensures reduced energy losses, improved efficiency, and reliable operation under high-stress conditions. Additionally, its robustness and durability make it an ideal choice for industrial and consumer electronics where long-term performance is critical. The complementary features of the STF5NK100Z support designers in creating energy-efficient systems with optimized thermal performance.
Equivalent
1. IRF840 by Infineon or Vishay - N-channel MOSFET with similar voltage and current ratings.
2. NTE2395 by NTE Electronics - Comparable N-channel MOSFET.
3. 2SK2847 by Toshiba - N-channel MOSFET with close specifications.
Ensure to check the datasheets for precise electrical characteristics and compatibility.
Features
1. Drain Source Voltage (V_DS): 1000V, suitable for high-voltage operations.
2. Continuous Drain Current (I_D): Up to 4.1A at 25°C, making it apt for moderate power applications.
3. On-Resistance (R_DS(on)): Typically around 3.5Ω at 10V gate-source voltage, contributing to efficient operation.
4. Gate Threshold Voltage (V_GS(th)): Ranges from 3V to 5V, facilitating ease of drive.
5. Fast Switching: Optimized for rapid switching with low energy loss.
6. Package: TO-220, which offers efficient heat dissipation.
7. Temperature Range: Can operate within a range from -55°C to 150°C, ensuring reliability in various environments.
8. Application: Often used in switch mode power supplies, lighting, and other high-voltage applications.
These features make the STF5NK100Z a versatile choice for engineers dealing with high-voltage electronic circuit designs.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. Applying a voltage to the gate pin allows current to flow between the drain and source, turning the device on.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or the return path for the current.
The STF5NK100Z is designed for high-voltage applications and is typically used in power supply circuits, motor drivers, and other applications requiring efficient switching.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Provides efficient power conversion.
2. Lighting Systems: Utilized in LED drivers and HID lamps.
3. DC-DC Converters: Enhances power management in various electronic devices.
4. Motor Control: Suitable for driving motors in industrial and consumer applications.
5. Inverters: Used in solar inverters and other energy conversion systems.
6. Telecommunications: Supports efficient power regulation in telecom equipment.
Its robust design and high-speed switching make it ideal for energy-efficient and high-reliability applications.