STGB10NB37LZ

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STGB10NB37LZ

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IGBT 440V 20A 125W D2PAK

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Spezifikationen

Attribut Wert
Supplier STMicroelectronics
Package / Case Tube
Series PowerMESH™
Part Status Obsolete
Voltage - Collector Emitter Breakdown(Max) 440 V
Current - Collector(Ic)(Max) 20 A
Current - Collector Pulsed(Icm) 40 A
Vce(on)(Max) @ Vge Ic 1.8V @ 4.5V, 10A
Power - Max 125 W
Switching Energy 2.4mJ (on), 5mJ (off)
Input Type Standard
Gate Charge 28 nC
Td(on / off) @ 25°C 1.3µs/8µs
Test Condition 328V, 10A, 1kOhm, 5V
Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

STGB10NB37LZ is a specific model number for an N-channel MOSFET transistor manufactured by STMicroelectronics. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are essential components in electronic devices used to switch or amplify electronic signals. The "STGB" prefix typically indicates that it is a series produced by STMicroelectronics, and the model's specifications include features such as a breakdown voltage (BVdss) of 100V, a continuous drain current (ID) of up to 9A, and low on-state resistance (Rds(on)). The "LZ" suffix might denote a specific packaging style or additional features, depending on the manufacturer's naming conventions.
This MOSFET is designed for a variety of applications, including power management, motor control, and other high-speed switching applications due to its low on-resistance and fast switching capabilities. Its robust design and reliable performance make it suitable for use in automotive, industrial, and consumer electronics. Always refer to the manufacturer's datasheet for detailed technical specifications and application guidelines.

Equivalent

The STGB10NB37LZ is an IGBT (Insulated Gate Bipolar Transistor) chip. Equivalent products include:
1. IRGB10B60KD by Infineon Technologies
2. RG45T12 by Rohm Semiconductor
3. IXGH10N60C2D1 by IXYS
4. APT10GT60BR by Microsemi
It's important to verify specifications and suitability for your application as equivalents may vary in parameters.

Features

The STGB10NB37LZ is an insulated gate bipolar transistor (IGBT) designed for high-efficiency switching applications. Key features include:
1. Voltage and Current Ratings: It typically operates at a voltage of up to 1000 volts and can handle a continuous collector current of around 10 amperes.
2. Low Saturation Voltage: Offers a low collector-emitter saturation voltage, which minimizes power loss and enhances efficiency.
3. Switching Performance: Optimized for fast switching speeds, making it suitable for applications requiring rapid on-off cycling, such as motor drives and inverters.
4. Robust Construction: Provides high ruggedness against electrical stress, ensuring reliable performance under harsh conditions.
5. Integrated Protection: Often features built-in protection like overcurrent and temperature sensing to prevent damage during operation.
6. Package Type: Typically available in a TO-220 or similar package, ensuring easy integration into various electronic circuits.
These features make the STGB10NB37LZ ideal for high-frequency applications, including consumer electronics, industrial machinery, and power management systems.

Pinout

The STGB10NB37LZ is an N-channel Power MOSFET manufactured by STMicroelectronics. It typically comes in a D2PAK package which has a total of 3 pins plus the tab. Here’s a concise description of its pin configuration and function:
1. Pin 1 (Gate): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate changes the conductivity between the drain and source.
2. Pin 2 (Drain): The drain is where the current enters the MOSFET when it is in the 'on' state. The drain is typically connected to the load.
3. Pin 3 (Source): The source is where the current exits the MOSFET. It is often connected to ground in many applications.
4. Tab (Drain): The tab is electrically connected to the drain and often used for both electrical connection and heat dissipation.
The STGB10NB37LZ is used in various power applications, including switching and amplifying signals in electronics.

Manufacturer

The STGB10NB37LZ is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing, developing, manufacturing, and marketing a wide range of semiconductor products. These products are used in various applications, including automotive, industrial, personal electronics, communications equipment, and computer peripherals. The company is recognized for its expertise in areas such as microcontrollers, sensors, power management, and digital integrated circuits. STMicroelectronics serves a diverse customer base with a focus on providing innovative solutions that enhance the functionality and performance of electronic devices.

Application

The STGB10NB37LZ is an N-channel MOSFET designed for use in automotive and industrial applications. Its key features make it suitable for motor control, DC-DC converters, and power management systems. It can also be employed in high-efficiency switching applications, such as power supplies and battery management systems. The MOSFET is designed to handle high currents and voltages, making it ideal for applications requiring efficient energy conversion and robust performance in challenging environments.

Package

The STGB10NB37LZ is typically available in a D2PAK package, which is a surface-mount package designed for power MOSFETs and other semiconductor devices. It is suitable for applications requiring efficient thermal management and compact board space.

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