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STGB10NB37LZ
+StücklisteIGBT 440V 20A 125W D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STGB10NB37LZ
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Datenblatt STGB10NB37LZ DataSheet
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Paket TO-263-3
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Auf Lager6408
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package / Case | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown(Max) | 440 V |
| Current - Collector(Ic)(Max) | 20 A |
| Current - Collector Pulsed(Icm) | 40 A |
| Vce(on)(Max) @ Vge Ic | 1.8V @ 4.5V, 10A |
| Power - Max | 125 W |
| Switching Energy | 2.4mJ (on), 5mJ (off) |
| Input Type | Standard |
| Gate Charge | 28 nC |
| Td(on / off) @ 25°C | 1.3µs/8µs |
| Test Condition | 328V, 10A, 1kOhm, 5V |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
This MOSFET is designed for a variety of applications, including power management, motor control, and other high-speed switching applications due to its low on-resistance and fast switching capabilities. Its robust design and reliable performance make it suitable for use in automotive, industrial, and consumer electronics. Always refer to the manufacturer's datasheet for detailed technical specifications and application guidelines.
Equivalent
1. IRGB10B60KD by Infineon Technologies
2. RG45T12 by Rohm Semiconductor
3. IXGH10N60C2D1 by IXYS
4. APT10GT60BR by Microsemi
It's important to verify specifications and suitability for your application as equivalents may vary in parameters.
Features
1. Voltage and Current Ratings: It typically operates at a voltage of up to 1000 volts and can handle a continuous collector current of around 10 amperes.
2. Low Saturation Voltage: Offers a low collector-emitter saturation voltage, which minimizes power loss and enhances efficiency.
3. Switching Performance: Optimized for fast switching speeds, making it suitable for applications requiring rapid on-off cycling, such as motor drives and inverters.
4. Robust Construction: Provides high ruggedness against electrical stress, ensuring reliable performance under harsh conditions.
5. Integrated Protection: Often features built-in protection like overcurrent and temperature sensing to prevent damage during operation.
6. Package Type: Typically available in a TO-220 or similar package, ensuring easy integration into various electronic circuits.
These features make the STGB10NB37LZ ideal for high-frequency applications, including consumer electronics, industrial machinery, and power management systems.
Pinout
1. Pin 1 (Gate): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate changes the conductivity between the drain and source.
2. Pin 2 (Drain): The drain is where the current enters the MOSFET when it is in the 'on' state. The drain is typically connected to the load.
3. Pin 3 (Source): The source is where the current exits the MOSFET. It is often connected to ground in many applications.
4. Tab (Drain): The tab is electrically connected to the drain and often used for both electrical connection and heat dissipation.
The STGB10NB37LZ is used in various power applications, including switching and amplifying signals in electronics.