STGD6NC60HDT4

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STGD6NC60HDT4

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IGBT 600V 15A 56W DPAK

  • HerstellerSTMikroelektronik

  • Herstellerteil #STGD6NC60HDT4

  • Paket TO-252-3

  • Auf Lager7130

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 15 A
Current-CollectorPulsed(Icm) 21 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 3A
Power-Max 56 W
SwitchingEnergy 20µJ (on), 68µJ (off)
InputType Standard
GateCharge 13.6 nC
Td(on/off)@25°C 12ns/76ns
TestCondition 390V, 3A, 10Ohm, 15V
ReverseRecoveryTime(trr) 21 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Übersicht

Description

The STGD6NC60HDT4 is a type of insulated-gate bipolar transistor (IGBT) commonly used in power electronics applications. It is manufactured by STMicroelectronics, a global semiconductor company. This specific IGBT is designed to handle high voltages and currents, making it suitable for use in switching applications such as motor drives, inverters, and power supplies.
Key features of the STGD6NC60HDT4 include a maximum collector-emitter voltage (V_CE) of 600 volts and a continuous collector current (I_C) of up to 12 amperes. It combines the high-efficiency characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor, thereby providing better performance in terms of speed and energy efficiency compared to traditional transistors.
The IGBT also features a fast-switching capability, which helps reduce switching losses, and it is designed to minimize electromagnetic interference (EMI). Overall, the STGD6NC60HDT4 is a reliable choice for applications requiring efficient and robust power switching.

Equivalent

The STGD6NC60HDT4 is a 600V IGBT transistor from STMicroelectronics. Equivalent products might include:
1. Infineon IKW06N60H3: A 600V, 6A IGBT.
2. ON Semiconductor FGP10N60UFD: A 600V, 10A IGBT.
3. Vishay IRG4BC20UDPBF: A 600V, 12A IGBT.
These alternatives are similar in voltage rating and function, but always verify specifications and pin configurations for compatibility.

Features

The STGD6NC60HDT4 is a semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is designed for use in high-efficiency power switching applications. Key features include:
1. Voltage and Current Ratings: Typically, it has a voltage rating of 600V and a current rating of 6A, making it suitable for medium power applications.
2. Low Saturation Voltage: This feature enhances efficiency by reducing power loss during conduction.
3. High-Speed Switching: The IGBT is optimized for fast switching, which improves performance in dynamic applications.
4. Robust Construction: It is designed to handle high temperatures and harsh conditions, contributing to reliability and longevity.
5. Integrated Protection: Includes features like short-circuit protection and thermal shutdown for enhanced safety and durability.
6. Compact Package: The transistor is available in a TO-220 package for easy integration into various electronic designs.
These features make the STGD6NC60HDT4 well-suited for use in applications such as motor drives, power supplies, and industrial automation systems.

Pinout

The STGD6NC60HDT4 is an IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics. It is typically used in applications requiring high-speed switching and high efficiency.
This particular IGBT is housed in a DPAK package, which is a type of surface-mount package. The DPAK package typically has three pins, which correspond to the following functions:
1. Collector (C): This is the pin through which the main current flows into the IGBT.
2. Gate (G): This pin is used to control the IGBT. A voltage applied to the gate modulates the conductivity between the collector and emitter.
3. Emitter (E): This is the pin through which the main current exits the IGBT.
These pins allow the STGD6NC60HDT4 to function effectively in power control and regulation applications. The IGBT is designed to handle substantial power levels and is used across various electronics applications, including motor drives, inverters, and power supplies.

Manufacturer

The STGD6NC60HDT4 is a semiconductor product manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company specializes in the development and production of a wide range of electronic components used in various applications, including automotive, industrial, consumer electronics, and telecommunications. As a leading player in the semiconductor industry, STMicroelectronics is known for its innovations in integrated circuits, microcontrollers, sensors, and discrete devices.

Application

The STGD6NC60HDT4 is a power transistor, specifically an IGBT (Insulated Gate Bipolar Transistor), designed for high-efficiency and fast-switching applications. It is commonly used in:
1. Motor Drives: Enhances performance in industrial and consumer motor control systems.
2. Power Supplies: Efficient in switch-mode power supplies and converters.
3. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Used in electronic ballasts and lighting systems.
5. Home Appliances: Helps improve energy efficiency in appliances like washing machines and air conditioners.
These application areas benefit from its robustness, low power loss, and high-speed switching capabilities.

Package

The STGD6NC60HDT4 is an IGBT (Insulated Gate Bipolar Transistor) with a DPAK package type. DPAK is a surface-mount package commonly used for power semiconductors, offering a compact design suitable for automated assembly processes.

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