STGW20H60DF

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STGW20H60DF

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IGBT TRENCH FS 600V 40A TO-247

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Attribut Wert
PartStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 80 A
Vce(on)(Max)@Vge,Ic 2V @ 15V, 20A
Power-Max 167 W
SwitchingEnergy 209µJ (on), 261µJ (off)
InputType Standard
GateCharge 115 nC
Td(on/off)@25°C 42.5ns/177ns
TestCondition 400V, 20A, 10Ohm, 15V
ReverseRecoveryTime(trr) 90 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3
SupplierDevicePackage TO-247
BaseProductNumber STGW20

Übersicht

Description

The STGW20H60DF is a high-voltage, N-channel power MOSFET designed for various applications, including power converters, inverters, and motor control systems. It features a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) rating of 20A. This device is known for its low on-resistance (RDS(on)), which enhances efficiency by reducing power losses during operation.
The STGW20H60DF is part of STMicroelectronics' lineup, characterized by excellent switching performance and thermal stability. It typically has a fast switching speed, making it suitable for use in high-frequency applications. Additionally, the device may come in different package options, such as TO-220, facilitating heat dissipation.
Engineers often select this MOSFET for applications requiring reliable performance under high voltage and current conditions, making it a popular choice in industrial and consumer electronics sectors. Proper thermal management and adequate gate drive circuitry are essential for optimal performance and reliability in circuit designs.

Equivalent

The STGW20H60DF is a 600V, 20A IGBT. Equivalent products include the Infineon IGBT FGH60N60SFD, the ON Semiconductor MBRF20H60, and the Mitsubishi MGF50N60. Other alternatives are the Fairchild FGH20N60 and the Toshiba GT20J60. Always check specific datasheets for detailed specifications and application compatibility.

Features

The STGW20H60DF is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: With a drain-source voltage (V_DS) of 600V, it is suitable for high-voltage applications.
2. Current Rating: It offers a maximum continuous drain current (I_D) of 20A, making it effective for power switching.
3. Low On-Resistance: It has a low R_DS(on) value, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device is designed for rapid switching, beneficial in applications like power supplies and converters.
5. Thermal Performance: It comes with a robust thermal resistance, allowing better heat dissipation during operation.
6. Package Type: Typically available in TO-220 or similar packages for ease of mounting and heat management.
7. Applications: Commonly used in switch-mode power supplies (SMPS), motor drives, and other power management systems.
This combination of features makes the STGW20H60DF a versatile choice for engineers in power electronics.

Pinout

The STGW20H60DF is a 600V, 20A IGBT (Insulated Gate Bipolar Transistor) designed primarily for power switching applications. It comes in a TO-247 package, which typically has three pins.
Pin count and function:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied here turns the IGBT on or off.
2. Collector (C): This pin is the output terminal through which the main current flows when the device is in the on-state.
3. Emitter (E): This pin serves as the return path for the current flowing through the device.
The STGW20H60DF is suitable for various applications including inverters, motor drives, and power supplies, offering low conduction losses and high-speed switching capabilities.

Manufacturer

The STGW20H60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is a French-Italian multinational corporation that designs, develops, manufactures, and markets a broad range of semiconductor products. The company serves various sectors, including automotive, industrial, personal electronics, and communication.
Founded in 1987, STMicroelectronics is known for its innovation in microelectronics and is a key player in the field of power management and energy-efficient solutions. The STGW20H60DF itself is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications, indicating STMicroelectronics' focus on providing high-performance components for power electronics.
With a commitment to sustainability and technological advancement, STMicroelectronics is involved in various initiatives to improve energy efficiency and reduce environmental impact. The company operates globally and is recognized for its strong research and development capabilities, making it a significant contributor to advancements in semiconductor technology.

Application

The STGW20H60DF is a high-voltage, high-current power MOSFET commonly used in various applications, including:
1. Switching Power Supplies - For efficient power conversion in industrial and consumer electronics.
2. Motor Drives - Used in electric motor control for automation, robotics, and electric vehicles.
3. Inverters - In renewable energy systems like solar inverters and UPS systems.
4. Lighting Controls - For driving LED and other lighting applications.
5. Heating Systems - In electric heating applications with precise control over power delivery.
Its capabilities make it suitable for high-performance and energy-efficient designs across these domains.

Package

The STGW20H60DF is packaged in a TO-220 housing. This package type is designed for efficient heat dissipation and is commonly used for high-power applications, providing a reliable connection and ease of mounting.

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