STGW30NC120HD

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STGW30NC120HD

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IGBT 1200V 60A 220W TO247

  • HerstellerSTMikroelektronik

  • Herstellerteil #STGW30NC120HD

  • Paket TO-247

  • Auf Lager5458

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Spezifikationen

Attribut Wert
Package Tube
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 60 A
Vce(on)(Max)@VgeIc 2.75V @ 15V, 20A
Power-Max 220 W
SwitchingEnergy 1.66mJ (on), 4.44mJ (off)
InputType Standard
GateCharge 110 nC
Td(on/off)@25°C 29ns/275ns
TestCondition 960V, 20A, 10Ohm, 15V
ReverseRecoveryTime(trr) 152 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The STGW30NC120HD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronic applications. It is manufactured by STMicroelectronics and is known for its robustness and efficiency. This device is part of the 1200V, 30A IGBT family and is often used in applications requiring high-speed switching and efficient energy management, such as motor drives, inverters, and power supplies.
Key features of the STGW30NC120HD include its low on-state voltage drop, which reduces power losses and increases efficiency. It also offers fast switching capabilities, ensuring minimal switching losses, and has a high current handling capacity. The device is designed to operate at high temperatures, making it suitable for demanding environments.
The STGW30NC120HD is encapsulated in a TO-247 package, providing easy mounting and heat dissipation. Additionally, it includes a co-packed freewheeling diode, which aids in reducing electromagnetic interference (EMI) and enhancing overall performance. Its rugged design ensures reliability and longevity in various industrial and commercial applications.

Equivalent

The STGW30NC120HD is a 1200V, 30A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. Equivalent products could include:
1. Infineon's IKW30N120T2
2. ON Semiconductor's FGA30N120
3. Vishay's IRG4BC30KD
These alternatives should be cross-referenced for specific parameter matching and application suitability, as variations in switching speed, package type, or other specifications may be present.

Features

The STGW30NC120HD is a high-performance insulated-gate bipolar transistor (IGBT) designed for various applications requiring efficient power switching. Key features include:
1. Voltage Rating: It can handle a collector-emitter voltage of up to 1200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous collector current is rated at 30A, allowing it to support substantial loads.
3. Low Saturation Voltage: It exhibits low on-state voltage drop, improving efficiency and reducing power loss during operation.
4. Switching Speed: Offers fast switching capabilities, enhancing performance in applications like inverters and motor drives.
5. Ruggedness: Designed to withstand high power and temperature conditions, ensuring reliability and durability.
6. Protection Features: Integrated protection mechanisms against short circuits and overloads help safeguard the device and connected components.
7. Package Type: Typically available in a TO-247 package, facilitating easy integration into circuit designs.
These features make the STGW30NC120HD a versatile option for applications in power conversion, motor control, and renewable energy systems.

Pinout

The STGW30NC120HD is an Insulated Gate Bipolar Transistor (IGBT) used mainly for high-power applications. It typically comes in a TO-247 package, which usually has three pins. The pin configuration and functions are as follows:
1. Collector (C): This is the main terminal for the flow of electrons. In an IGBT, the collector is where the majority of the load current is switched.
2. Gate (G): This terminal controls the switching operation of the IGBT. A voltage applied to the gate controls the current flow between the collector and the emitter.
3. Emitter (E): This is the terminal where the majority of carriers leave the device. It completes the circuit for the load current when the IGBT is on.
These pins allow the IGBT to function as a controlled switch, ideal for applications involving high voltage and high current, such as motor drives, power inverters, and other industrial power electronics.

Manufacturer

The STGW30NC120HD is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. It is known for producing a wide range of semiconductor products, including integrated circuits and discrete devices, that serve various applications such as automotive, industrial, personal electronics, and communication equipment. The company is headquartered in Geneva, Switzerland, and operates globally with multiple research and development centers, manufacturing sites, and sales offices.

Application

The STGW30NC120HD is a high-speed IGBT (Insulated Gate Bipolar Transistor) used in power electronics applications. It is commonly employed in areas such as motor drives, power inverters, and uninterruptible power supplies (UPS). Additionally, it is used in industrial power control systems, induction heating, and welding equipment. Its high voltage and current handling capabilities make it suitable for applications requiring efficient switching and energy management. The component is also chosen for applications where compact design and thermal efficiency are critical, providing reliable performance in demanding environments.

Package

The STGW30NC120HD is an insulated-gate bipolar transistor (IGBT) with a TO-247 package type. This package is commonly used for high-power and high-voltage applications, providing efficient heat dissipation and ease of mounting on a heatsink.

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