STGWA60H65DFB

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STGWA60H65DFB

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IGBT BIPO 650V 60A TO247-3

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Spezifikationen

Attribut Wert
Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@VgeIc 2V @ 15V, 60A
Power-Max 375 W
SwitchingEnergy 1.59mJ (on), 900µJ (off)
InputType Standard
GateCharge 306 nC
Td(on/off)@25°C 66ns/210ns
TestCondition 400V, 60A, 10Ohm, 15V
ReverseRecoveryTime(trr) 60 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The STGWA60H65DFB is a 650V, 60A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-efficiency power switching applications. It features a fast-switching capability, low conduction losses, and a high current rating, making it suitable for inverters, motor drives, and industrial power systems.
Key characteristics:
- Low VCE(sat) for reduced conduction losses.
- High-speed switching with optimized gate charge.
- Robust short-circuit withstand time (1.5µs).
- Temperature range: -40°C to 175°C.
Packaged in a TO-247 form factor, it ensures efficient thermal dissipation. The device integrates a freewheeling diode, enhancing reliability in inductive load applications.
Ideal for:
- Solar inverters
- Welding equipment
- UPS systems
For detailed specs, refer to the datasheet on ST’s website.

Equivalent

Equivalent products to the STGWA60H65DFB (650V, 60A IGBT) include:
- Infineon: IKW60N65EH5
- ON Semiconductor: FGH60N65SMD
- Mitsubishi: CM600HA-65H
- Fuji Electric: 6MBI60VA-065
These alternatives offer similar voltage, current ratings, and performance for power applications. Always verify datasheets for exact compatibility.

Features

The STGWA60H65DFB is a 650V, 60A IGBT module from STMicroelectronics, designed for high-efficiency power applications. Key features include:
- Voltage & Current Ratings: 650V VCES, 60A IC (25°C).
- Low VCE(sat): 1.55V (typical), reducing conduction losses.
- Fast Switching: Optimized for high-frequency operation.
- Integrated Diode: Co-packaged anti-parallel diode for freewheeling.
- High Temp Operation: Rated up to 175°C for robust performance.
- Low-Loss Design: Improved thermal and electrical efficiency.
- Isolated Baseplate: Simplified heatsink mounting and safety.
Ideal for motor drives, UPS, and industrial inverters. Compact and reliable for demanding environments.

Pinout

The STGWA60H65DFB is a 65A, 650V IGBT module with a built-in anti-parallel diode, housed in a 26-pin package.
Key Functions:
- High-power switching (e.g., motor drives, inverters).
- Integrated diode for reverse current protection.
- Low VCE(sat) for efficient conduction.
- High-temperature operation (up to 150°C).
Pin Configuration Includes:
- Collector (C), Emitter (E), Gate (G) for IGBT control.
- Auxiliary emitter for gate drive stability.
- Thermal pad for heat dissipation.
Designed for industrial applications like UPS, welding, and renewable energy systems.

Application

The STGWA60H65DFB (a 650V, 60A IGBT module) is commonly used in:
1. Motor Drives – Industrial and automotive applications for efficient power control.
2. Power Supplies – High-efficiency SMPS and UPS systems.
3. Renewable Energy – Solar inverters and wind power converters.
4. Welding Equipment – High-current switching in arc welding machines.
5. Induction Heating – Fast switching for precise temperature control.
Its high voltage and current ratings make it suitable for robust, high-power applications requiring reliable performance.

Package

The STGWA60H65DFB is a 650V, 60A IGBT in a TO-247 package. This package type is widely used for high-power applications, offering robust thermal and electrical performance. It features three leads and is suitable for through-hole mounting. The TO-247 design ensures efficient heat dissipation, making it ideal for demanding environments like motor drives and power converters.

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