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STH180N10F3-6
+StücklisteMOSFET N-CH 100V 180A H2PAK-6
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HerstellerSTMikroelektronik
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Herstellerteil #STH180N10F3-6
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Datenblatt STH180N10F3-6 DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ III |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 114.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6665 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
