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STH315N10F7-6
+StücklisteMOSFET N-CH 100V 180A H2PAK-6
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HerstellerSTMikroelektronik
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Herstellerteil #STH315N10F7-6
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Datenblatt STH315N10F7-6 DataSheet
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Auf Lager4493
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.3mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
Übersicht
Description
Key specifications include a low R_DS(on) of 3.1 mΩ, which enhances power efficiency and thermal performance. The STH315N10F7-6 is suitable for DC-DC converters, power supply units, motor control systems, and other high-frequency applications where efficiency and compact size are crucial.
It is housed in a TO-220 package, supporting ease of mounting and thermal management. The device also incorporates advanced materials and design features that ensure robust performance in demanding environments, making it a reliable choice for both industrial and consumer applications.
Equivalent
1. IRLB3034PBF from Infineon Technologies.
2. IPP037N10N3 G from Infineon Technologies.
3. FDP2532 from ON Semiconductor.
Ensure the substitutes match key parameters like V_ds, I_d, R_ds(on), and the package format to ensure compatibility.
Features
1. N-channel MOSFET: It is an N-channel device, which is typically used in low-side switching applications.
2. Voltage and Current Ratings: It is designed to handle high currents and voltages, with specifications usually around 100V and a high current capacity.
3. Low On-Resistance: This MOSFET features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: It offers fast switching capabilities, making it suitable for high-frequency applications.
5. Thermal Performance: Enhanced thermal performance due to optimized packaging and construction.
6. Package: Typically available in a surface-mount package like PowerFLAT or D2PAK, which aids in heat dissipation and compact design.
7. Applications: Ideal for use in power management, automotive, and industrial applications where efficient power conversion is required.
These features make the STH315N10F7-6 a reliable choice for efficient power conversion in demanding applications.
Pinout
In terms of pin count and function:
- Pin Count: The STH315N10F7-6 typically has 3 main pins.
- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here is used to turn the MOSFET on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
The STH315N10F7-6 is optimized for high-speed switching, making it suitable for applications like DC-DC converters and power management in various electronics.
Manufacturer
Application
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for improved efficiency.
2. Motor Control: Suitable for motor drivers in industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
4. LED Drivers: Employed in high-efficiency LED lighting systems.
5. Consumer Electronics: Applied in various electronic devices to manage power distribution.
Its characteristics like low on-resistance and high-speed switching make it ideal for these applications.