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STI33N65M2
+StücklisteMOSFET N-CH 650V 24A I2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STI33N65M2
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Datenblatt STI33N65M2 DataSheet
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Auf Lager3715
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ M2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 140mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 41.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1790 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | I2PAK |
