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STI6N62K3
+StücklisteMOSFET N-CH 620V 5.5A I2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STI6N62K3
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Datenblatt STI6N62K3 DataSheet
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Auf Lager8078
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH3™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 620 V |
| Current-ContinuousDrain(Id)@25°C | 5.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 2.8A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 875 pF @ 50 V |
| PowerDissipation(Max) | 90W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | I2PAK |
