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STN4NF06L
+StücklisteMOSFET N-CH 60V 4A SOT-223
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HerstellerSTMikroelektronik
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Herstellerteil #STN4NF06L
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 2.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9 nC @ 5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 340 pF @ 25 V |
| PowerDissipation(Max) | 3.3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Übersicht
Description
STN4NF06L is a 60 V, N‑channel enhancement‑mode Power MOSFET from STMicroelectronics. It is a logic‑level device for power switching in applications such as DC motors, buck/boost converters, and general load switching. When the gate is driven above threshold, the MOSFET conducts with low on‑state resistance, enabling efficient current flow up to several amperes with adequate heatsinking. Key specs include VDS = 60 V, ID around 4 A (temperature/package dependent), and a gate threshold typically 1–2 V. The device features a fast body diode for inductive loads. It is available in common power packages (surface‑mount and through‑hole variants). For exact values such as Rds(on) at a given VGS, total gate charge, and switching times, consult the ST datasheet. In short, STN4NF06L is a compact logic‑level N‑MOSFET suitable for switching power with simple gate drive.
Equivalent
Equivalent parts for STN4NF06L (60V N‑channel MOSFET, ~4 A, logic‑level):
- STP55NF06L (ST) – 55V, ~46A, logic-level
- IRF3205 (Infineon/IR) – 55V, ~110A, logic-level
- FQP30N06L (ON Semiconductor) – 60V, ~30A, logic-level
- IRLZ44N (older, widely used) – 55V, ~47A, logic-level
Note: choose by exact packaging, Rds(on), and gate threshold; verify datasheets for a precise cross-reference.
- STP55NF06L (ST) – 55V, ~46A, logic-level
- IRF3205 (Infineon/IR) – 55V, ~110A, logic-level
- FQP30N06L (ON Semiconductor) – 60V, ~30A, logic-level
- IRLZ44N (older, widely used) – 55V, ~47A, logic-level
Note: choose by exact packaging, Rds(on), and gate threshold; verify datasheets for a precise cross-reference.
Features
STN4NF06L is an STMicroelectronics N-channel, enhancement-mode MOSFET. Key features:
- Vds: 60 V maximum
- Id: about 4 A continuous
- Rds(on): very low (tens of milliohms; exact value depends on Vgs)
- Gate drive: logic-level capable; fully enhanced around 4.5–10 V
- Fast switching with low gate charge
- Built-in body diode; avalanche-rated for protection
- Packaging: surface-mount power package variants (DPAK/TO-252 family); RoHS-compliant
- Applications: switching power supplies, motor drivers, DC–DC converters
- Robustness: suitable for wide operating temperature ranges
Note: Check the exact electricals and package options in the official ST datasheet for STN4NF06L.
- Vds: 60 V maximum
- Id: about 4 A continuous
- Rds(on): very low (tens of milliohms; exact value depends on Vgs)
- Gate drive: logic-level capable; fully enhanced around 4.5–10 V
- Fast switching with low gate charge
- Built-in body diode; avalanche-rated for protection
- Packaging: surface-mount power package variants (DPAK/TO-252 family); RoHS-compliant
- Applications: switching power supplies, motor drivers, DC–DC converters
- Robustness: suitable for wide operating temperature ranges
Note: Check the exact electricals and package options in the official ST datasheet for STN4NF06L.
Pinout
Pin count: 3 pins (plus a drain tab). Pinout (left to right, facing the front): Gate (G), Drain (D), Source (S). The metal tab is also Drain.
Function: N‑channel enhancement‑mode power MOSFET (60 V, ~4 A), logic‑level gate. Used for switching loads in power circuits (low‑side switches, etc.).
Function: N‑channel enhancement‑mode power MOSFET (60 V, ~4 A), logic‑level gate. Used for switching loads in power circuits (low‑side switches, etc.).
Manufacturer
- Manufacturer: STMicroelectronics (ST).
- What kind of company: A multinational European semiconductor company that designs, manufactures, and sells a broad range of electronic components and systems (ICs, discrete devices, MEMS/sensors, power devices, etc.).
- What kind of company: A multinational European semiconductor company that designs, manufactures, and sells a broad range of electronic components and systems (ICs, discrete devices, MEMS/sensors, power devices, etc.).
Application
STN4NF06L is a logic-level N-channel MOSFET (about 60 V, ~4 A). Common applications:
- Switching power supplies and DC-DC converters
- Motor control and drive circuits (DC motors, small steppers)
- High-side/low-side switching in automotive and industrial electronics
- Solar inverters and charge controllers
- Power-management in chargers and adapters
- General-purpose fast-switching loads in microcontroller-based designs
It’s suitable where moderate voltage/current switching with logic-level gate drive is needed.
- Switching power supplies and DC-DC converters
- Motor control and drive circuits (DC motors, small steppers)
- High-side/low-side switching in automotive and industrial electronics
- Solar inverters and charge controllers
- Power-management in chargers and adapters
- General-purpose fast-switching loads in microcontroller-based designs
It’s suitable where moderate voltage/current switching with logic-level gate drive is needed.
Package
STN4NF06L is aN-channel Power MOSFET in a surface-mount DPAK (TO-252) package (lead-free).
