Abbildungen dienen nur als Referenz
STP20NM60
+StücklisteMOSFET N-CH 600V 20A TO220AB
-
HerstellerSTMikroelektronik
-
Herstellerteil #STP20NM60
-
Datenblatt STP20NM60 DataSheet
-
Auf Lager1686
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ |
| Part Status | Active |
| Base Product Number | STP20 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
Übersicht
Description
The MOSFET is built using ST’s proprietary MDmesh technology, which provides a low on-resistance (R_DS(on)) and high-speed switching capabilities. This makes it efficient for use in power conversion systems like SMPS (Switched-Mode Power Supplies) and motor control applications. Additionally, the STP20NM60 offers low gate charge, enhancing its performance in terms of reduced power loss and improved thermal management.
Packaged in a TO-220 format, the STP20NM60 provides ease of mounting and integration into electronic designs. Its design also ensures protection against over-current and voltage spikes, contributing to the longevity and stability of electronic systems.
Equivalent
Features
Other key attributes include a total power dissipation of 200W, a low gate threshold voltage, and a maximum junction temperature of 150°C. The STP20NM60 is packaged in a TO-220 form factor, which is widely used for its balance of performance and thermal management capabilities. It is suitable for applications such as switch-mode power supplies, motor control, and other high-voltage circuits where efficiency and reliability are critical.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, the user can switch the transistor on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the terminal through which the majority of the current flows when the MOSFET is turned on. It connects to the load in the circuit.
3. Source (S): This terminal is the return path for the current flowing through the drain. It is typically connected to the ground or a common reference point in the circuit.
The STP20NM60 is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 600V and can handle a continuous drain current of 20A. It is often used in power supplies, inverters, and motor control applications.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Utilized in controlling motors in industrial and automotive applications.
3. Lighting: Employed in LED drivers for efficient lighting solutions.
4. Inverters: Key component in DC to AC inverters for renewable energy systems.
5. Battery Management: Used in battery charging and discharging systems for optimal energy use.
Its characteristics, such as low on-state resistance and high-speed switching, make it suitable for these applications.