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STP24N60DM2
+StücklisteMOSFET N-CH 600V 18A TO220
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HerstellerSTMikroelektronik
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Herstellerteil #STP24N60DM2
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Datenblatt STP24N60DM2 DataSheet
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Auf Lager3670
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Spezifikationen
| Attribut | Wert |
| Series | FDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 200mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1055 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP24 |
Übersicht
Description
The STP24N60DM2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A. This device is particularly suitable for switching applications in power supplies, motor drives, and other industrial circuits.
Key features include low on-resistance (R_DS(on)) for efficient performance, fast switching speeds, and thermal stability. The STP24N60DM2 is housed in a TO-220 package, which allows for effective heat dissipation and easy integration into various electronic designs.
Its high breakdown voltage and robust construction make it ideal for driving inductive loads and handling large current spikes. Overall, the STP24N60DM2 is a reliable choice for engineers seeking to implement efficient, high-voltage power management solutions in their projects.
Key features include low on-resistance (R_DS(on)) for efficient performance, fast switching speeds, and thermal stability. The STP24N60DM2 is housed in a TO-220 package, which allows for effective heat dissipation and easy integration into various electronic designs.
Its high breakdown voltage and robust construction make it ideal for driving inductive loads and handling large current spikes. Overall, the STP24N60DM2 is a reliable choice for engineers seeking to implement efficient, high-voltage power management solutions in their projects.
Equivalent
The STP24N60DM2 is a N-channel MOSFET, and its equivalents include the IRF240, FQP24N60, and MTP24N60. These alternatives have similar voltage and current ratings, typically around 600V and 24A. Always check datasheets for specific parameters like Rds(on) and gate threshold voltage to ensure compatibility for your application.
Features
The STP24N60DM2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Continuous Drain Current: 24A at a 25°C case temperature.
- On-Resistance: Low R_DS(on) of around 0.18Ω, which enhances efficiency.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, suitable for driving with standard logic levels.
- Fast Switching: Designed for high-speed switching applications, reducing switching losses.
- High Power Dissipation: Capable of handling up to 100W of power dissipation with proper heatsinking.
- Package Type: Available in TO-220 package for easy mounting and thermal management.
- Applications: Ideal for use in switch-mode power supplies, motor control, and automotive applications.
These features make the STP24N60DM2 suitable for both industrial and consumer electronics requiring efficient and reliable power management.
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Continuous Drain Current: 24A at a 25°C case temperature.
- On-Resistance: Low R_DS(on) of around 0.18Ω, which enhances efficiency.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, suitable for driving with standard logic levels.
- Fast Switching: Designed for high-speed switching applications, reducing switching losses.
- High Power Dissipation: Capable of handling up to 100W of power dissipation with proper heatsinking.
- Package Type: Available in TO-220 package for easy mounting and thermal management.
- Applications: Ideal for use in switch-mode power supplies, motor control, and automotive applications.
These features make the STP24N60DM2 suitable for both industrial and consumer electronics requiring efficient and reliable power management.
Pinout
The STP24N60DM2 is an N-channel MOSFET with a 5-pin configuration. Here are the pin functions:
1. Gate (G): Controls the switching of the MOSFET; applying a voltage here turns the device on/off.
2. Drain (D): The terminal where the current exits the MOSFET; it connects to the load.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Tab (T): Often connected to the source; it serves as a heat sink for thermal management.
5. Body Diode: Internal to the MOSFET, allowing current to flow from the source to the drain when the device is off.
The STP24N60DM2 is designed for high-voltage applications, rated for 600V and features low on-resistance, making it suitable for various power management applications.
1. Gate (G): Controls the switching of the MOSFET; applying a voltage here turns the device on/off.
2. Drain (D): The terminal where the current exits the MOSFET; it connects to the load.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Tab (T): Often connected to the source; it serves as a heat sink for thermal management.
5. Body Diode: Internal to the MOSFET, allowing current to flow from the source to the drain when the device is off.
The STP24N60DM2 is designed for high-voltage applications, rated for 600V and features low on-resistance, making it suitable for various power management applications.
Manufacturer
The STP24N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its diverse portfolio, which includes microcontrollers, analog components, and power semiconductors, catering to various industries such as automotive, industrial, personal electronics, and communication. Established in 1987 through the merger of SGS Microelettronica (Italy) and Thomson Semiconducteurs (France), STMicroelectronics has become one of the world's leading suppliers in the semiconductor industry. The company emphasizes innovation and sustainability, focusing on developing advanced technologies that support energy efficiency and environmental responsibility.
Application
The STP24N60DM2 is a high-voltage N-channel MOSFET used in various applications, including:
1. Switching Power Supplies: To efficiently convert and regulate voltage.
2. DC-DC Converters: For step-up or step-down voltage applications.
3. Motor Drives: In driving electric motors for industrial and automotive uses.
4. Lighting Control: In LED drivers and dimmers.
5. Inverters: Used in renewable energy systems like solar inverters.
6. Consumer Electronics: For power management in devices.
7. Class D Amplifiers: In audio applications for efficient amplification.
Its high voltage and current ratings make it suitable for these applications.
1. Switching Power Supplies: To efficiently convert and regulate voltage.
2. DC-DC Converters: For step-up or step-down voltage applications.
3. Motor Drives: In driving electric motors for industrial and automotive uses.
4. Lighting Control: In LED drivers and dimmers.
5. Inverters: Used in renewable energy systems like solar inverters.
6. Consumer Electronics: For power management in devices.
7. Class D Amplifiers: In audio applications for efficient amplification.
Its high voltage and current ratings make it suitable for these applications.
Package
The STP24N60DM2 is typically packaged in a TO-220 format. This package type provides good thermal performance and is suitable for applications requiring effective heat dissipation.
