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STP35N65DM2
+StücklisteMOSFET N-CH 650V 32A TO220
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HerstellerSTMikroelektronik
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Herstellerteil #STP35N65DM2
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Datenblatt STP35N65DM2 DataSheet
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Auf Lager6668
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Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ DM2 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 32A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 110mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56.3 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2540 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP35 |
Übersicht
Description
The STP35N65DM2 is a N-channel MOSFET designed for high-performance switching applications. With a voltage rating of 650V and a continuous drain current of 35A, it is suitable for use in power supplies, converters, and motor control circuits. This MOSFET features a low on-resistance (RDS(on)) of approximately 0.35 ohms, which minimizes power loss and enhances efficiency in switching operations.
Its fast switching capabilities make it ideal for applications that require quick response times, such as inverters and pulse-width modulation (PWM) circuits. The STP35N65DM2 also includes a robust thermal performance, allowing it to operate effectively at elevated temperatures.
Encapsulated in a TO-220 package, it offers easy mounting and good heat dissipation characteristics. The device is suitable for both high-frequency and high-voltage applications, making it a versatile choice for designers seeking efficient and reliable power solutions.
Its fast switching capabilities make it ideal for applications that require quick response times, such as inverters and pulse-width modulation (PWM) circuits. The STP35N65DM2 also includes a robust thermal performance, allowing it to operate effectively at elevated temperatures.
Encapsulated in a TO-220 package, it offers easy mounting and good heat dissipation characteristics. The device is suitable for both high-frequency and high-voltage applications, making it a versatile choice for designers seeking efficient and reliable power solutions.
Equivalent
The STP35N65DM2 is a N-channel MOSFET with a 650V rating and a 35A continuous drain current. Equivalent products include the IRF3205, IRF840, and STP40NF6. Other alternatives may include the AUIRF3205 and FQP50N60. When selecting an equivalent, ensure that the voltage, current rating, Rds(on), and package type match your requirements. Always consult the datasheet for detailed specifications.
Features
The STP35N65DM2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 650V drain-source voltage (Vds) allows for operation in high-voltage circuits.
- Current Rating: Continuous drain current (Id) of 35A, suitable for various load requirements.
- Rds(on): Low on-resistance of approximately 0.045 ohms, minimizing conduction losses and improving thermal performance.
- Gate Threshold Voltage: Vgs(th) between 2V to 4V, enabling efficient switching with logic-level gate drive.
- Fast Switching Speed: Optimized for rapid switching, which is beneficial for high-frequency applications.
- Package: Available in the TO-220 package, facilitating easy heat dissipation and mounting.
- Applications: Ideal for use in power supplies, motor drives, and other energy conversion systems.
Overall, the STP35N65DM2 is suitable for high-performance applications requiring efficiency and reliable operation in demanding environments.
- Voltage Rating: 650V drain-source voltage (Vds) allows for operation in high-voltage circuits.
- Current Rating: Continuous drain current (Id) of 35A, suitable for various load requirements.
- Rds(on): Low on-resistance of approximately 0.045 ohms, minimizing conduction losses and improving thermal performance.
- Gate Threshold Voltage: Vgs(th) between 2V to 4V, enabling efficient switching with logic-level gate drive.
- Fast Switching Speed: Optimized for rapid switching, which is beneficial for high-frequency applications.
- Package: Available in the TO-220 package, facilitating easy heat dissipation and mounting.
- Applications: Ideal for use in power supplies, motor drives, and other energy conversion systems.
Overall, the STP35N65DM2 is suitable for high-performance applications requiring efficiency and reliable operation in demanding environments.
Pinout
The STP35N65DM2 is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin is where the current enters the device from the load.
3. Source (S): The source pin is where the current exits the device back to the power supply.
The STP35N65DM2 is designed for high voltage applications, capable of handling 650V with a continuous drain current rating of up to 35A. It is typically used in power switching applications, such as in power supplies, motor control, and other high-efficiency configurations.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin is where the current enters the device from the load.
3. Source (S): The source pin is where the current exits the device back to the power supply.
The STP35N65DM2 is designed for high voltage applications, capable of handling 650V with a continuous drain current rating of up to 35A. It is typically used in power switching applications, such as in power supplies, motor control, and other high-efficiency configurations.
Manufacturer
The STP35N65DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its diverse portfolio that includes microcontrollers, power management devices, and analog components. The company serves a variety of markets, including automotive, industrial, personal electronics, and telecommunications. STMicroelectronics focuses on developing innovative technologies that enhance the performance and energy efficiency of electronic devices. Their products are widely used in applications ranging from consumer electronics to advanced automotive systems, reflecting their commitment to sustainability and cutting-edge technology.
Application
The STP35N65DM2 is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Switching Power Supplies: Utilized in converters and inverters for efficient power conversion.
2. Motor Control: Employed in brushless DC motor drivers and other motor control circuits.
3. Lighting Applications: Used in LED drivers and dimmers.
4. Automotive Applications: Found in electric vehicle systems and DC-DC converters.
5. Consumer Electronics: Applied in power supplies for various electronic devices.
Its high voltage and current handling capabilities make it suitable for these demanding applications.
1. Switching Power Supplies: Utilized in converters and inverters for efficient power conversion.
2. Motor Control: Employed in brushless DC motor drivers and other motor control circuits.
3. Lighting Applications: Used in LED drivers and dimmers.
4. Automotive Applications: Found in electric vehicle systems and DC-DC converters.
5. Consumer Electronics: Applied in power supplies for various electronic devices.
Its high voltage and current handling capabilities make it suitable for these demanding applications.
Package
The STP35N65DM2 is packaged in a TO-220 form factor. This package type provides effective thermal management and allows for easy mounting to heatsinks, making it suitable for various high-power applications.
