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STP40N60M2
+StücklisteMOSFET N-CH 600V 34A TO220
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HerstellerSTMikroelektronik
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Herstellerteil #STP40N60M2
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Datenblatt STP40N60M2 DataSheet
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Paket TO-220
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Auf Lager2870
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 88mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 57 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
Key characteristics of the STP40N60M2 include low on-state resistance, which minimizes power loss and thermal dissipation. It also features a fast switching performance, enhancing the efficiency of power converters, inverters, and other switching applications. The device is typically used in applications like motor control, power supply units, and various industrial equipment.
The STP40N60M2 is packaged in the TO-220 package, which provides good thermal performance and ease of mounting. It is part of STMicroelectronics' MDmesh II series, known for its low gate charge and optimized gate-source voltage range, further improving efficiency and performance in demanding applications.
Equivalent
1. IRFP460 from Infineon
2. FDP047AN08A0 from ON Semiconductor
3. FDPF12N60NZ from Fairchild/ON Semiconductor
Be sure to verify electrical characteristics and package compatibility when selecting an equivalent for your application.
Features
1. N-channel MOSFET: Optimized for efficient switching.
2. Voltage and Current Ratings: Capable of handling a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 40A.
3. R_DS(on): Low on-resistance, typically around 0.065 ohms, reducing power loss and improving efficiency.
4. High-Speed Switching: Suitable for fast switching applications, enhancing performance in various electronic circuits.
5. TO-247 Package: Encased in a TO-247 package, providing robust mechanical stability and efficient thermal dissipation.
6. Avalanche Ruggedness: Enhanced ruggedness against voltage spikes and avalanche conditions.
7. Applications: Ideal for use in power supplies, motor control, and other applications requiring high efficiency and reliability.
These features make the STP40N60M2 a reliable choice for designers seeking effective solutions in power electronics.
Pinout
- Pin Count: 3 pins
- Pin Functions:
1. Gate (G): This pin receives the input voltage that controls the MOSFET's switching state. A voltage applied here determines whether the MOSFET is in an 'on' or 'off' state.
2. Drain (D): The Drain is the pin through which the main current flows from the load when the MOSFET is in the 'on' state.
3. Source (S): This is the pin connected to the ground or the negative side of the power supply. The current flows out through this pin when the MOSFET is conducting.
This device is typically used in high-efficiency power supplies, motor control, and other applications requiring robust power handling and fast switching.
Manufacturer
Application
1. Power Supply Units: Utilized in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for controlling and driving motors in industrial and automotive systems.
3. Inverters: Used in DC-AC inverters for renewable energy systems like solar inverters.
4. Lighting Systems: Integrated into LED drivers and other lighting solutions.
5. Telecommunications: Employed in power management circuits for telecom equipment.
Its features like low on-resistance and fast switching make it ideal for these high-efficiency applications.