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STW12N150K5
+StücklisteMOSFET N-CH 1500V 7A TO247
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HerstellerSTMikroelektronik
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Herstellerteil #STW12N150K5
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Datenblatt STW12N150K5 DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1500 V |
| Current-ContinuousDrain(Id)@25°C | 7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.9Ohm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1360 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
Key features of the STW12N150K5 include:
- Low on-resistance (R_DS(on)), which helps reduce conduction losses.
- Fast switching performance, contributing to higher efficiency in switching applications.
- High avalanche ruggedness, ensuring reliability in demanding environments.
- A maximum continuous drain current rating, typically around 12A, allowing it to handle significant power levels.
This MOSFET is encapsulated in a TO-247 package, providing good thermal management and enabling it to be used in applications where heat dissipation is a concern. Overall, the STW12N150K5 is a robust and efficient choice for designers looking to optimize power efficiency and performance in high-voltage applications.
Equivalent
1. Infineon IPP60R099P7
2. Vishay IRFP460
3. ON Semiconductor FDPF12N50T
4. Fairchild FQA12N50
Make sure to verify the specs like V_ds, I_d, R_ds(on), and package compatibility to ensure suitability for your application.
Features
1. N-channel MOSFET: It utilizes an N-channel configuration, enhancing its efficiency and switching speed.
2. Voltage and Current Ratings: The device can handle a maximum drain-source voltage (Vds) of 1500V and a continuous drain current (Id) of 12A, making it suitable for high-voltage applications.
3. Low On-Resistance: The MOSFET features a low on-resistance (Rds(on)), which reduces conduction losses, improving overall efficiency.
4. High-Speed Switching: It is designed for high-speed switching, which is critical in reducing energy loss during transitions.
5. Robustness: The device incorporates advanced technology for high ruggedness, ensuring reliability under demanding conditions.
6. Package Type: It is available in TO-247, which provides good thermal performance for cooling.
These features make the STW12N150K5 suitable for use in applications such as power supplies, inverters, and other high-voltage circuits requiring efficient power management.
Pinout
As for the pin count and functions:
- Pin Count: The STW12N150K5 is typically packaged in a TO-247, which usually has 3 pins.
- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET’s switching operation. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): The drain is the connection through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the return path for the current flowing through the drain.
These pins allow the STW12N150K5 to function as an efficient switch in electronic circuits.
Manufacturer
Application
1. Switching Power Supplies: Ideal for use in SMPS for industrial and consumer electronics.
2. Motor Control: Used in controlling motors in appliances and automotive applications.
3. Lighting: Suitable for high-efficiency lighting systems, such as LED drivers.
4. Inverters: Employed in solar inverters and UPS systems for efficient power conversion.
5. Telecommunications: Utilized in power management systems within telecom equipment.
These applications leverage the MOSFET’s high voltage capability, low on-state resistance, and fast switching characteristics.