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STW48N60DM2
+StücklisteMOSFET N-CH 600V 40A TO247
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HerstellerSTMikroelektronik
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Herstellerteil #STW48N60DM2
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Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ DM2 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 79mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3250 pF @ 100 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | TO-247-3 |
| BaseProductNumber | STW48 |
Übersicht
Description
It also has a fast switching speed, making it suitable for high-frequency applications. The STW48N60DM2 is housed in a TO-220 package, facilitating effective thermal management, and is designed to withstand high temperatures, ensuring reliability in various conditions.
This MOSFET is commonly used in applications like switch-mode power supplies (SMPS), inverters, and other industrial equipment where effective switching and thermal performance are crucial. Its robust specifications make it a preferred choice for engineers looking to optimize the performance and efficiency of their designs.
Equivalent
Features
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 600V, it is suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 48A at a 25°C case temperature, providing robust performance.
3. R_DS(on): The on-resistance is low, typically around 0.28 ohms at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for efficient drive from standard logic levels.
5. Fast Switching: Designed for quick switching speeds, it minimizes switching losses, making it ideal for power supplies and converters.
6. Package: Available in a TO-247 package, ensuring effective thermal management with a good heat dissipation ability.
Overall, the STW48N60DM2 is well-suited for power electronics in industrial and automotive applications.
Pinout
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit. It completes the circuit for current flow.
The STW48N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A, making it suitable for various power conversion applications.
Manufacturer
Founded in 1987 through a merger of Italian and French companies, STMicroelectronics operates in numerous countries and is known for its innovation in the semiconductor industry. The STW48N60DM2 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. The device is characterized by its high voltage rating and low on-resistance, making it suitable for use in power supplies, motor drives, and other applications requiring efficient switching. Overall, STMicroelectronics is recognized for its commitment to technological advancement and sustainability in the semiconductor sector.
Application
1. Switch Mode Power Supplies (SMPS) - Efficient switching in power converters.
2. Motor Drives - Control of brushless DC and stepper motors.
3. Power Inverters - Used in renewable energy systems like solar inverters.
4. Lighting Control - For LED drivers and dimmers.
5. Audio Amplifiers - For high-efficiency amplification.
6. Industrial Automation - In control systems and robotics.
Its high breakdown voltage and low on-resistance make it suitable for demanding applications requiring efficient power management.