STW58N60DM2AG

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STW58N60DM2AG

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MOSFET N-CH 600V 50A TO247

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Attribut Wert
Package Tube
Series Automotive, AEC-Q101, MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 25A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4100 pF @ 100 V
PowerDissipation(Max) 360W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Übersicht

Description

The STW58N60DM2AG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the MDmesh DM2 series produced by STMicroelectronics, which is known for its low gate charge and fast switching capabilities, making it suitable for various power management applications.
Key specifications include a voltage rating of 600V and a continuous current rating of 58A. The MOSFET offers a low on-resistance, which minimizes conduction losses, enhancing overall efficiency. This component is housed in a TO-247 package, providing a robust solution for applications that require efficient heat dissipation.
The STW58N60DM2AG is often used in applications such as power supplies, motor drives, and other systems where high-speed switching and efficiency are critical. Its advanced design ensures reduced electromagnetic interference and optimized power density. Overall, the STW58N60DM2AG delivers reliable performance in demanding environments, making it a preferred choice for engineers and designers focusing on energy-efficient solutions.

Equivalent

The STW58N60DM2AG is a power MOSFET, and equivalent products typically have similar voltage and current ratings (600V, 58A). Consider alternatives like:
1. Infineon IPW60R041P6 - Similar specifications with enhanced performance.
2. Fairchild FCH076N60F - Comparable in voltage and current ratings.
3. Vishay IRFP460 - Suitable for similar applications with slightly different specifications.
Always check the datasheet for differences in parameters like Rds(on) and switching speeds to ensure compatibility with your specific application.

Features

The STW58N60DM2AG is a power MOSFET transistor developed by STMicroelectronics. It features a maximum drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications. The device can handle a continuous drain current (I_d) of up to 58A. It utilizes MDmesh DM2 technology, which provides improved efficiency and reduced on-resistance (R_ds(on)), enhancing performance in power conversion applications. The MOSFET comes in a TO-247 package, which aids in heat dissipation, thereby improving thermal performance. It is designed for fast switching, making it ideal for use in power supply, motor control, and other high-frequency applications. The STW58N60DM2AG also includes avalanche ruggedness, ensuring reliability under demanding conditions.

Pinout

The STW58N60DM2AG is a power MOSFET transistor manufactured by STMicroelectronics. It is part of the MDmesh DM2 series and is typically used in high-efficiency power conversion applications.
Pin Count:
- The STW58N60DM2AG comes in a TO-247 package, which typically has 3 pins.
Pin Function:
1. Gate (G): This pin is responsible for turning the MOSFET on and off. It controls the flow of current between the drain and source by applying a voltage.
2. Drain (D): This pin connects to the high voltage side of the circuit. It is the terminal through which the load current flows.
3. Source (S): This pin is connected to the ground or the low side of the circuit. It is the return path for the load current.
The STW58N60DM2AG is designed for high-voltage and high-speed applications, providing low on-resistance and optimized switching characteristics. It is commonly used in applications such as power supplies, converters, and inverters.

Manufacturer

The STW58N60DM2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company focuses on various markets, including automotive, industrial, personal electronics, communications equipment, and computer peripherals. STMicroelectronics is known for its innovation and production of integrated circuits, discrete devices, and MEMS (Micro-Electro-Mechanical Systems) technology. The company operates in diverse sectors, providing components that are essential for the operation and performance enhancement of electronic devices and systems across the globe.

Application

The STW58N60DM2AG is a power MOSFET designed for high-efficiency power management applications. Its key application areas include:
1. Switching Power Supplies: Used in various electronic devices for efficient power conversion.
2. Motor Drives: Ideal for controlling electric motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures continuous power delivery in critical systems.
4. Lighting Systems: Supports energy-efficient lighting solutions such as LED drivers.
5. Renewable Energy Systems: Used in inverters for solar and wind power applications.
6. DC-DC Converters: Enhances performance in voltage regulation tasks.
Its robustness and efficiency make it suitable for these demanding applications.

Package

The STW58N60DM2AG is a power MOSFET from STMicroelectronics housed in a TO-247 package. This package type is designed for high power and high voltage applications, offering enhanced thermal performance and reliability for demanding environments.

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