STW70N60M2

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STW70N60M2

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MOSFET N-CH 600V 68A TO247

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Attribut Wert
Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 68A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 34A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 118 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5200 pF @ 100 V
PowerDissipation(Max) 450W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247

Übersicht

Description

The STW70N60M2 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by STMicroelectronics. Part of the MDmesh™ M2 series, it offers advanced performance for power applications. This MOSFET features a low on-resistance, which minimizes power dissipation and enhances efficiency, making it suitable for high-frequency applications. It operates with a maximum drain-source voltage (V_ds) of 600V and can handle continuous drain current up to 70A, enabling it to manage heavy loads.
The STW70N60M2 is built for use in various applications, including power supplies, converters, motor drives, and industrial equipment. It features a fast switching capability and low gate charge, optimizing it for use in switch-mode power supplies (SMPS) and other power conversion systems. The device comes in a TO-247 package, which provides a convenient form factor for heat dissipation and easy mounting onto a heatsink.
Overall, the STW70N60M2 stands out for its efficiency and reliability, making it an ideal choice for demanding power management applications.

Equivalent

The STW70N60M2 is a Power MOSFET from STMicroelectronics. Equivalent products may include:
1. IRFP460 from Infineon Technologies: Similar voltage and current ratings.
2. FQA70N10 from ON Semiconductor: Comparable performance characteristics.
3. IXFH62N60 from IXYS: Offers similar features in terms of voltage and current.
When selecting an equivalent, ensure to verify the specific electrical and thermal characteristics to ensure compatibility with your application.

Features

The STW70N60M2 is an N-channel MOSFET from STMicroelectronics, designed for power applications. Key features of this component include:
1. Voltage and Current Ratings: It offers a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 70A, making it suitable for high-voltage and high-current applications.
2. Technology: It is built using MDmesh™ M2 technology, which combines low on-resistance with fast switching capabilities, enhancing efficiency in power conversion systems.
3. Low On-Resistance: The device has a low R_DS(on), reducing conduction losses and improving overall performance.
4. Package Type: Available in a TO-247 package, which is suitable for mounting on PCBs with adequate heat dissipation features.
5. Applications: Commonly used in switching power supplies, motor drives, and other power management systems due to its robust performance and efficiency.
6. Thermal Performance: It provides good thermal performance, important for maintaining reliability and longevity in demanding applications.
These features make it a reliable choice for various industrial and consumer electronic applications requiring efficient power handling.

Pinout

The STW70N60M2 is a power MOSFET manufactured by STMicroelectronics. It is part of the MDmesh™ M2 series, known for high efficiency and fast switching capabilities, making it suitable for various power applications.
Pin Count:
The STW70N60M2 is typically housed in a TO-247 package, which has three pins.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin where the main current flows out of the MOSFET when it is turned on. It is connected to the load in the circuit.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is usually connected to the ground or the negative side of the power supply.
The STW70N60M2 is characterized by a 600V drain-to-source voltage (V_DS) and a continuous drain current (I_D) of 70A, making it suitable for high-power applications.

Manufacturer

The STW70N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company is known for providing innovative solutions across a variety of applications, including automotive, industrial, personal electronics, and communications equipment. It offers products such as microcontrollers, sensors, power management devices, and integrated circuits, serving a diverse range of industries.

Application

The STW70N60M2 is a power MOSFET commonly used in applications requiring efficient power management and high-speed switching. Typical application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for improved efficiency.
2. Motor Control: Utilized in motor drives and inverters for industrial and consumer applications.
3. Renewable Energy Systems: Applicable in solar inverters and wind energy conversion systems.
4. Automotive: Suitable for electric and hybrid vehicle power management systems.
5. Industrial Equipment: Employed in power management circuits for industrial automation and control systems.
Its features, such as low on-resistance and high current capability, make it ideal for these demanding applications.

Package

The STW70N60M2 is packaged in a TO-247 package. This type of package is commonly used for high-power components like MOSFETs, offering a robust design suitable for efficient heat dissipation.

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