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SUD19P06-60-GE3
+StücklisteMOSFET P-CH 60V 18.3A TO252
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HerstellerVishay Siliconix
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Herstellerteil #SUD19P06-60-GE3
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Paket TO-252-3
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Auf Lager4574
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 18.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1710 pF @ 25 V |
| Power Dissipation (Max) | 2.3W (Ta), 38.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Übersicht
Description
Equivalent
1. IRF4905 from Infineon Technologies
2. FQP27P06 from ON Semiconductor
3. NDP6020P from ON Semiconductor
4. STP60PF06 from STMicroelectronics
These equivalents are chosen based on similar voltage, current ratings, and package type, but always verify specific parameters for compatibility in your application.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It typically has a high drain-to-source voltage rating, often around 60V.
3. Current Rating: The component can handle a significant amount of continuous drain current, often in the tens of amperes range.
4. RDS(on): It features a low on-state resistance, which helps in reducing conduction losses and improving efficiency.
5. Package: Available in a TO-252 package, which is suitable for surface mount technology.
6. Applications: Commonly used in power management, load switching, and DC-DC conversion applications due to its efficiency and reliability.
7. Thermal Performance: Enhanced thermal performance due to its package design, allowing for better heat dissipation.
Please check the manufacturer's datasheet for exact specifications and ensure compatibility with your application.
Pinout
1. Gate (G): This pin is used to control the MOSFET's turning on and off by applying the appropriate voltage.
2. Drain (D): This pin is connected to the load, allowing the current to flow when the MOSFET is turned on.
3. Source (S): This is the pin through which the current enters the MOSFET when it is conducting.
The tab on the DPAK package is typically connected to the Drain, helping with heat dissipation. The SUD19P06-60-GE3 is designed for use in a variety of applications, including power management and switching circuits, where it functions as a switch or amplifier.