SUM110P08-11L-E3

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SUM110P08-11L-E3

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MOSFET P-CH 80V 110A TO263

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Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 110A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 11.2mOhm @ 20A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 270 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10850 pF @ 40 V
PowerDissipation(Max) 13.6W (Ta), 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-263 (D²Pak)

Übersicht

Description

The phrase "Introduction to SUM110P08-11L-E3" likely refers to a specific course, module, or technical document. While the exact details aren't provided, here's a general breakdown:
1. SUM110P08-11L-E3: This could be a course code or part number.
- SUM: Could denote a subject area, like "Summer" or an acronym for a specific field.
- 110P08-11L-E3: This might indicate a specific version, level, or section within the broader topic.
2. Introduction: This section would typically provide an overview of the course or component, outlining key objectives, topics covered, or the purpose of the document.
3. Content: Expect a brief overview of:
- Purpose or objectives.
- Key topics or components.
- Prerequisites or required knowledge.
- Expected outcomes or benefits.
4. Audience: Likely designed for students, professionals, or users seeking specific knowledge or skills related to the code.
Without additional context, these are educated guesses. For precise details, consult the specific course syllabus, catalog, or accompanying documentation.

Equivalent

The SUM110P08-11L-E3 is a P-channel MOSFET. Equivalent products could include similar P-channel MOSFETs with comparable voltage, current ratings, and packaging. Examples include:
1. IRF9Z34N from Infineon Technologies (formerly International Rectifier)
2. FQP27P06 from ON Semiconductor
3. SI4435DY from Vishay
4. PSMN1R8-40PL from Nexperia
Ensure to verify specific electrical characteristics and package compatibility when selecting an alternative.

Features

The SUM110P08-11L-E3 is a P-channel MOSFET designed for various electronic applications. Here are some of its key features:
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of up to -100V and an on-state continuous drain current (I_D) of approximately -110A, making it suitable for high-power applications.
2. Low On-Resistance: It features a low on-state resistance, which minimizes power losses and improves efficiency in switching applications.
3. Packages and Mounting: This MOSFET comes in various package options, designed for surface mounting, which facilitates efficient thermal management and easy integration into circuits.
4. Temperature Range: It operates effectively over a wide temperature range, suitable for environments requiring robust thermal performance.
5. Applications: Commonly used in DC-DC converters, motor drives, switch-mode power supplies, and other power management systems.
6. Reliability: It is designed to offer high reliability and durability, supporting a long operational lifespan in demanding conditions.
These features make the SUM110P08-11L-E3 a versatile choice for designers looking for efficient, reliable power control solutions in electronic devices.

Pinout

The SUM110P08-11L-E3 is a P-channel MOSFET manufactured by Vishay. It typically comes in a D2PAK (TO-263) package, which usually features three pins and a tab. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. By applying a voltage to the gate, you can turn the MOSFET on or off.

2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the 'on' state. It's typically connected to the load.
3. Source (S): This pin is the terminal where the current enters the MOSFET. It's usually connected to ground or the lower potential in the circuit for P-channel MOSFETs.
The tab of the package is typically connected to the Drain pin, and it often serves as a heatsink to dissipate heat during operation. This MOSFET is designed for high efficiency and fast switching applications.

Manufacturer

The SUM110P08-11L-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for producing a wide range of electronic components, including diodes, MOSFETs, resistors, capacitors, and inductors. Vishay's products are used in various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company is recognized for its innovation and extensive portfolio, providing components that are integral to the functionality and efficiency of electronic devices and systems.

Application

The SUM110P08-11L-E3 is an N-channel MOSFET commonly used in power management applications. Key application areas include DC-DC converters, power supply units, and motor control systems. It is also utilized in load switching, battery protection, and LED drivers due to its efficiency and reliability. The MOSFET's low on-resistance and fast switching capabilities make it suitable for high-speed and high-efficiency applications. Additionally, it can be found in automotive electronic systems, industrial automation equipment, and consumer electronics, where robust and efficient power management is required.

Package

The SUM110P08-11L-E3 is a power MOSFET, and its package type is a TO-220. This package is commonly used for power semiconductor devices due to its ability to handle significant heat dissipation.

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