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SUM110P08-11L-E3
+StücklisteMOSFET P-CH 80V 110A TO263
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HerstellerVishay Siliconix
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Herstellerteil #SUM110P08-11L-E3
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Datenblatt SUM110P08-11L-E3 DataSheet
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Paket TO-263-3
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Auf Lager5827
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 11.2mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 10850 pF @ 40 V |
| PowerDissipation(Max) | 13.6W (Ta), 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D²Pak) |
Übersicht
Description
1. SUM110P08-11L-E3: This could be a course code or part number.
- SUM: Could denote a subject area, like "Summer" or an acronym for a specific field.
- 110P08-11L-E3: This might indicate a specific version, level, or section within the broader topic.
2. Introduction: This section would typically provide an overview of the course or component, outlining key objectives, topics covered, or the purpose of the document.
3. Content: Expect a brief overview of:
- Purpose or objectives.
- Key topics or components.
- Prerequisites or required knowledge.
- Expected outcomes or benefits.
4. Audience: Likely designed for students, professionals, or users seeking specific knowledge or skills related to the code.
Without additional context, these are educated guesses. For precise details, consult the specific course syllabus, catalog, or accompanying documentation.
Equivalent
1. IRF9Z34N from Infineon Technologies (formerly International Rectifier)
2. FQP27P06 from ON Semiconductor
3. SI4435DY from Vishay
4. PSMN1R8-40PL from Nexperia
Ensure to verify specific electrical characteristics and package compatibility when selecting an alternative.
Features
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of up to -100V and an on-state continuous drain current (I_D) of approximately -110A, making it suitable for high-power applications.
2. Low On-Resistance: It features a low on-state resistance, which minimizes power losses and improves efficiency in switching applications.
3. Packages and Mounting: This MOSFET comes in various package options, designed for surface mounting, which facilitates efficient thermal management and easy integration into circuits.
4. Temperature Range: It operates effectively over a wide temperature range, suitable for environments requiring robust thermal performance.
5. Applications: Commonly used in DC-DC converters, motor drives, switch-mode power supplies, and other power management systems.
6. Reliability: It is designed to offer high reliability and durability, supporting a long operational lifespan in demanding conditions.
These features make the SUM110P08-11L-E3 a versatile choice for designers looking for efficient, reliable power control solutions in electronic devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the 'on' state. It's typically connected to the load.
3. Source (S): This pin is the terminal where the current enters the MOSFET. It's usually connected to ground or the lower potential in the circuit for P-channel MOSFETs.
The tab of the package is typically connected to the Drain pin, and it often serves as a heatsink to dissipate heat during operation. This MOSFET is designed for high efficiency and fast switching applications.