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T2535-600G-TR
+StücklisteTRIAC ALTERNISTOR 600V 25A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #T2535-600G-TR
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Datenblatt T2535-600G-TR DataSheet
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Auf Lager2496
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | Snubberless™ |
| PartStatus | Active |
| BaseProductNumber | T2535 |
| TriacType | Alternistor - Snubberless |
| Voltage-OffState | 600 V |
| Current-OnState(It(RMS))(Max) | 25 A |
| Voltage-GateTrigger(Vgt)(Max) | 1.3 V |
| Current-NonRep.Surge50,60Hz(Itsm) | 250A, 260A |
| Current-GateTrigger(Igt)(Max) | 35 mA |
| Current-Hold(Ih)(Max) | 80 mA |
| Configuration | Single |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| SupplierDevicePackage | D2PAK |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The device typically supports various protocols, ensuring compatibility with a wide range of systems and architectures. Its advanced design emphasizes energy efficiency and thermal management, helping to reduce operational costs and enhance system reliability.
In addition, the T2535-600G-TR is engineered for scalability, making it suitable for both small-scale and large-scale deployments. With a focus on durability and longevity, it is an ideal choice for industries demanding high-performance solutions that can withstand rigorous operational conditions. Overall, the T2535-600G-TR stands out as a key component in the evolution of next-generation computing technologies.
Equivalent
Features
1. Capacity: 600GB storage, providing ample space for applications and data.
2. Interface: Utilizes the SATA III interface for fast data transfer rates, ensuring compatibility with a wide range of systems.
3. Performance: Delivers read speeds up to 550 MB/s and write speeds up to 500 MB/s, enhancing system responsiveness.
4. Durability: Built with advanced NAND flash technology, offering greater reliability and longevity compared to traditional HDDs.
5. Power Efficiency: Consumes less power than mechanical drives, contributing to longer battery life in portable devices.
6. Form Factor: 2.5-inch form factor, making it suitable for both desktops and laptops.
7. TRIM Support: Ensures optimal performance over time by maintaining the SSD's efficiency during write operations.
Overall, the T2535-600G-TR is an excellent choice for users seeking a balance of speed, capacity, and reliability in their storage solutions.
Pinout
The functions of the pins are as follows:
1. Gate (G): Controls the MOSFET’s on/off state.
2. Drain (D): Connects to the load and allows current flow from drain to source when activated.
3. Source (S): Connects to ground or negative supply; current exits through this pin.
4. Body Diode: Integrated within the MOSFET, allows current to flow in the reverse direction when the MOSFET is off.
The T2535-600G-TR is typically used in power electronics, including DC-DC converters, motor drives, and other applications requiring efficient power switching.
Manufacturer
Toshiba is recognized for its innovation in semiconductor technology and has a strong presence in the market, providing a wide range of products that serve multiple industries, including automotive, industrial, and consumer electronics. The company's focus on R&D and commitment to sustainability also highlights its role in advancing technology for a more efficient future.
Application
1. Power Management: Used in DC-DC converters and voltage regulation.
2. Switching Power Supplies: Ideal for efficient switching in power supply circuits.
3. Motor Control: Employed in driving electric motors, enhancing efficiency and control.
4. Lighting Applications: Utilized in LED drivers and lighting control circuits.
5. Automotive Electronics: Suitable for power distribution and management in vehicles.
6. Consumer Electronics: Applied in devices requiring efficient power conversion and control.
Its low on-resistance and high-speed switching capabilities make it versatile across these areas.