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TC58NVG0S3EBAI4
+StücklisteNAND Flash 3.3V 1Gb 43nm SLC NAND (EEPROM)
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HerstellerKioxia Amerika
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Herstellerteil #TC58NVG0S3EBAI4
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Auf Lager12092
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tray |
| Standard Pack Qty | 210 |
Übersicht
Description
The TC58NVG0S3EBAI4 typically offers a storage capacity suited for mid-range applications and provides a balance between cost and performance. The chip utilizes a single-level cell (SLC) or multi-level cell (MLC) technology, depending on the specific product configuration, which impacts its speed, durability, and endurance.
It offers features like high-speed data transfer rates and robust error-correction capabilities to ensure data integrity. Its small form factor and low power consumption make it suitable for portable devices. Overall, the TC58NVG0S3EBAI4 is a reliable choice for applications requiring efficient and durable flash memory solutions.
Equivalent
Features
1. Memory Type: Single-Level Cell (SLC) NAND Flash, known for higher durability and faster operation compared to multi-level cell technologies.
2. Capacity: Typically available in 1Gb (gigabit) capacity, suitable for basic storage needs.
3. Voltage: Operates at a standard 3.3V, which is common for many electronic devices.
4. Interface: Supports a standard NAND interface, allowing for compatibility with a wide range of controllers.
5. Performance: Offers high-speed read and write operations, which are advantageous for applications requiring rapid data processing.
6. Reliability: SLC technology ensures a higher endurance, making it suitable for applications where data integrity is critical.
7. Package Type: Available in a TSOP (Thin Small Outline Package), ensuring a compact form factor for integration into various devices.
These features make the TC58NVG0S3EBAI4 suitable for use in industrial applications, embedded systems, and consumer electronics where reliability and performance are key considerations.
Pinout
Key functions of the TC58NVG0S3EBAI4 include:
1. Data Storage: It provides non-volatile storage, meaning it retains data even when power is removed.
2. Read/Write Operations: Supports standard NAND flash memory operations such as programming (writing), erasing, and reading.
3. High Density: Offers a high density of data storage, which is ideal for applications requiring large amounts of data storage in a compact form factor.
4. Endurance and Reliability: Designed to withstand a significant number of program/erase cycles, ensuring durability over time.
This chip is commonly used in consumer electronics like smartphones, tablets, and solid-state drives (SSDs), as well as in industrial applications where reliable data storage is critical.