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TC58NVG0S3HTA00
+StücklisteIC FLASH 1GBIT PARALLEL 48TSOP I
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HerstellerKioxia America, Inc.
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Herstellerteil #TC58NVG0S3HTA00
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Auf Lager7163
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | TC58NVG0 |
| Digi Key Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
| Access Time | 25 ns |
Übersicht
Description
The TC58NVG0S3HTA00 features Single-Level Cell (SLC) technology, which stores one bit of data per cell, providing enhanced endurance and reliability compared to Multi-Level Cell (MLC) and Triple-Level Cell (TLC) technologies. It supports standard NAND flash memory interfaces, ensuring compatibility with a wide range of systems and controllers.
Key specifications include its large data storage capacity, fast data transfer rates, and low power consumption, which are critical for portable and battery-operated devices. The device also incorporates error correction code (ECC) capabilities to enhance data integrity. Overall, the TC58NVG0S3HTA00 is a robust solution for applications requiring durable and efficient flash memory storage.
Equivalent
1. Samsung K9F1G08U0E
2. Micron MT29F1G08ABADAWP
3. Hynix HY27UF081G2M
These equivalents offer similar capacities and interfaces but always verify the specifications and compatibility with your application before substituting.
Features
1. Memory Type: It is a NAND flash memory, commonly used for storage in various electronic devices.
2. Density: The chip typically offers a storage capacity of 1Gb (gigabit).
3. Interface: It uses a parallel interface for data transfers, which is standard for NAND flash memory devices.
4. Voltage: The device operates at low voltages, typically around 3.3V, which helps in reducing power consumption.
5. Package: It is available in TSOP (Thin Small Outline Package), which is compact and suitable for limited-space applications.
6. Error Correction: It supports error correction codes (ECC) to maintain data integrity during read and write operations.
7. Block Architecture: The memory is organized in blocks, which are the smallest erasable units, making it suitable for applications that require frequent updates to stored data.
8. Reliability: The device is designed for high endurance, supporting numerous program/erase cycles.
These features make the TC58NVG0S3HTA00 suitable for use in consumer electronics, industrial applications, and other devices requiring reliable, high-density flash storage.
Pinout
Key functions of the TC58NVG0S3HTA00 include:
1. Data Storage: Allows for the storage and retrieval of data.
2. Non-Volatile: Retains data without power.
3. Random Access: Supports random data access, important for performance.
4. Block Erase: Data can be erased at the block level.
5. Cost-Effective: Generally, NAND Flash offers a cost-effective solution for large storage needs.
This chip is well-suited for applications in consumer electronics, industrial systems, and other areas where reliable and efficient storage is needed.
Manufacturer
Application
1. Consumer Electronics: Used in devices like smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Provides reliable storage for industrial applications, including automotive electronics and IoT devices.
3. Data Storage Solutions: Utilized in solid-state drives (SSDs) and USB flash drives.
4. Networking Equipment: Employed in routers and switches for firmware and configuration data storage.
5. Medical Devices: Offers dependable storage solutions for portable and diagnostic equipment.
Its high-density storage and reliability make it suitable for a wide range of technological applications.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of this NAND Flash?
A: It has a 1Gbit capacity organized as 128M x 8 bits, ideal for code or data storage in embedded systems.
Q: Is this component a Single-Level Cell (SLC) NAND Flash?
A: Yes, it uses SLC technology, offering higher endurance and reliability compared to MLC or TLC NAND.
Q: What is the supply voltage range for TC58NVG0S3HTA00?
A: It operates from 2.7V to 3.6V, making it compatible with standard 3.3V logic systems.
Q: What does the 25ns access time mean for system performance?
A: The 25ns access time and 25ns write cycle per page ensure fast read/write operations for command and data transfers.
Q: What is the operating temperature range for this device?
A: It supports an industrial temperature range of 0°C to 70°C, suitable for consumer and commercial electronics.
Q: How is memory data accessed via the interface?
A: It uses a parallel memory interface, typically requiring multiplexed address/data lines on an 8-bit bus.
Q: What package option does this part use?
A: It is offered in a 48-TFSOP package (18.40mm width) with a 48-TSOP I supplier device package, surface mount.
Q: Is the TC58NVG0S3HTA00 still in active production?
A: No, its part status is Obsolete, so it is recommended to check stock or alternative compatible parts for new designs.
