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TK100E10N1,S1X(S
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HerstellerToshiba
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Herstellerteil #TK100E10N1,S1X(S
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Auf Lager3296
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Manufacturer | TOSHIBA |
| Package / Case | TO-220 |
| Rds(on) | 3.4mΩ@10V,50A |
| Drain to Source Voltage (Vdss) | 100V |
| Pd - Power Dissipation | 255W |
| Current - Continuous Drain(Id) | 100A |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
Übersicht
Description
Typically, such models might include features like:
- Technical Specifications: Voltage ratings, current capacities, and operational limits.
- Applications: Usage in industrial settings, home automation, or IoT devices.
- Interfaces: Types of connections available (e.g., USB, serial, wireless).
- Compatibility: Integration with existing systems or standards.
For precise details, including functionality, performance metrics, and application areas, consulting manufacturer documentation or datasheets is recommended. This ensures accurate understanding and best practices for implementation.
Equivalent
Features
1. Voltage Rating: Typically operates at high voltages, suitable for various applications in power management.
2. Low On-Resistance (R_DS(on)): Provides efficient conduction, minimizing power loss and heat generation.
3. High Current Handling: Capable of handling significant current levels, ideal for high-performance devices.
4. Fast Switching Speed: Enables quick transition between on and off states, enhancing overall efficiency in circuits.
5. Thermal Stability: Designed to operate effectively across a wide temperature range, ensuring reliability in various conditions.
6. Package Type: Available in a compact package that facilitates easier integration into electronic designs.
These features make the TK100E10N1, S1X(S suitable for applications in power converters, inverters, and other electronic devices requiring efficient power management.
Pinout
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The output pin where the load is connected and the main current flows out.
3. Source (S): The input pin where the current enters from the source.
4. Body Diode (B): Provides a path for reverse current; typically internal to the MOSFET structure.
5. Thermal Pad (TP): Used for heat dissipation; not a pin but important for thermal management.
The specific configuration may vary slightly based on the package type, but these are the typical functions associated with the pins of the TK100E10N1, S1X MOSFET. Always refer to the manufacturer's datasheet for detailed pinout and electrical characteristics.
Manufacturer
Toshiba is well-known for its contributions to the IT and consumer electronics industries, producing everything from laptops and hard drives to advanced industrial systems and energy solutions. The company emphasizes research and development, aiming to provide cutting-edge technologies that enhance societal infrastructure and improve daily life.
In the semiconductor segment, Toshiba is recognized for high-quality power devices, memory chips, and system-on-chip solutions, catering to various applications, including automotive, industrial, and consumer electronics. The TK100E10N1, S1X likely pertains to a specific semiconductor product, reflecting Toshiba's continued focus on high-performance electronic components.
In summary, Toshiba is a diversified technology company with a significant presence in electronics and semiconductors, known for its commitment to innovation and quality.
Application
1. Power Supply Circuits: Efficient switching in DC-DC converters and power management systems.
2. Motor Control: Driving and controlling electric motors in industrial and automotive applications.
3. LED Drivers: Regulating power for LED lighting systems.
4. Class D Amplifiers: Used in audio amplification for high efficiency.
5. Telecommunications: Power amplification in RF applications.
Its characteristics make it suitable for high-frequency, high-efficiency switching applications, providing reliability and performance in these areas.