TK100S04N1L

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TK100S04N1L

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MOSFETs

  • HerstellerToshiba

  • Herstellerteil #TK100S04N1L

  • Auf Lager10362

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Description

The TK100S04N1L is a 100A, 40V N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
- High Current Handling: Supports up to 100A continuous drain current.
- Fast Switching: Optimized for applications like motor drives, DC-DC converters, and power management.
- Robust Design: Features a TO-263 (D2PAK) package for better thermal performance.
Common uses include battery management systems (BMS), inverters, and load switches. Its low gate charge ensures efficient high-frequency operation.
For detailed specs, refer to the datasheet for voltage thresholds, thermal characteristics, and safe operating areas.

Equivalent

The TK100S04N1L is a power MOSFET. Equivalent or similar products include:
- IRF3205 (International Rectifier)
- FDP047N08 (Fairchild/ON Semiconductor)
- STP80NF55-06 (STMicroelectronics)
- AOT428 (Alpha & Omega Semiconductor)
These alternatives offer comparable voltage, current, and RDS(on) specifications. Always verify datasheet compatibility for your application.

Features

The TK100S04N1L is a 100A, 400V Schottky diode module with the following key features:
- Low Forward Voltage Drop: Minimizes power loss for higher efficiency.
- Fast Switching: Ideal for high-frequency applications.
- High Surge Current Capability: Robust performance under transient conditions.
- Low Reverse Leakage Current: Enhances thermal stability.
- Isolated Baseplate: Simplifies heat sink mounting and improves thermal management.
- RoHS Compliant: Environmentally friendly design.
Commonly used in power supplies, inverters, and motor drives.

Pinout

The TK100S04N1L is a 4-pin IGBT module. Its pin functions are as follows:
1. Collector (C) – High-voltage input.
2. Emitter (E) – Ground/return path.
3. Gate (G) – Control signal input for switching.
4. Temperature Monitor (T or K) – Optional thermal sensor output (varies by model).
This module is designed for high-power switching in applications like motor drives and inverters. Check the datasheet for exact specifications, as pin configurations may vary slightly.

Manufacturer

The TK100S04N1L is a power module manufactured by Toshiba Electronic Devices & Storage Corporation, a subsidiary of Toshiba.
Toshiba is a Japanese multinational conglomerate known for its expertise in semiconductors, electronic components, and industrial power devices. The company produces a wide range of products, including power modules, MOSFETs, IGBTs, and other energy-efficient solutions for automotive, industrial, and consumer applications.
The TK100S04N1L is part of Toshiba's IGBT module lineup, designed for high-power switching applications such as motor drives and inverters. Toshiba is recognized for its reliable and high-performance power electronics, catering to industries requiring robust energy management solutions.

Application

The TK100S04N1L is a 100A, 40V Schottky barrier diode, commonly used in:
1. Power Supplies – Rectification in DC/DC converters and SMPS.
2. Solar Systems – Preventing reverse current in photovoltaic arrays.
3. Automotive Electronics – Battery protection and voltage regulation.
4. Motor Drives – Freewheeling diode in H-bridge circuits.
5. Industrial Equipment – High-efficiency rectification in heavy-duty applications.
Its low forward voltage drop and fast switching make it ideal for high-current, low-voltage systems requiring minimal power loss.

Produkte, die mit TK100S04N1L zusammenhängen