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TN2010H-6G-TR
+StücklisteSCR 600V 20A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #TN2010H-6G-TR
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Datenblatt TN2010H-6G-TR DataSheet
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Paket D2PAK-2
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Auf Lager6609
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Voltage - Off State | 600 V |
| Voltage - Gate Trigger(Vgt)(Max) | 1.3 V |
| Current - Gate Trigger(Igt)(Max) | 10 mA |
| Voltage - On State(Vtm)(Max) | 1.6 V |
| Current - On State(It(AV))(Max) | 12.7 A |
| Current - On State(It(RMS))(Max) | 20 A |
| Current - Hold(Ih)(Max) | 40 mA |
| Current - Off State(Max) | 5 µA |
| Current - Non Rep Surge5060 Hz(Itsm) | 197A, 180A |
| SCR Type | Sensitive Gate |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The TN prefix might indicate the manufacturer's code or the type of component, while 2010 could relate to its series or model number. The H might designate a specific feature or characteristic, such as a higher tolerance or power rating. The 6G could refer to a particular configuration or specification, and TR usually denotes that the component is supplied in tape and reel packaging for automated assembly processes.
This type of component is used in numerous applications, including consumer electronics, automotive systems, and industrial equipment, where reliability and performance are critical. For accurate details, consulting the manufacturer's datasheet is essential for understanding its specifications and applications.
Equivalent
Features
1. N-channel MOSFET: Designed for efficient switching and amplification.
2. Low On-Resistance: Offers low RDS(on) values, enhancing efficiency and minimizing power loss.
3. High-Speed Switching: Suitable for applications requiring rapid switching speeds.
4. Advanced Package: Typically comes in a compact, thermally efficient package such as SOT-23 or similar, facilitating easy integration onto PCBs.
5. Voltage and Current Ratings: Generally supports moderate to high voltage and current, making it versatile for different applications.
6. Thermal Performance: Optimized for reliable operation with enhanced thermal characteristics.
7. ESD Protection: Features built-in electrostatic discharge protection, ensuring robustness against voltage spikes.
8. Applications: Commonly used in power management, DC-DC converters, load switches, and other electronic circuits requiring efficient power control.
These features make the TN2010H-6G-TR a reliable choice for engineers and designers looking for a versatile and efficient MOSFET solution.
Pinout
1. Gate: Controls the MOSFET; voltage applied here regulates the current flow between Source and Drain.
2. Drain: One terminal of the MOSFET through which the main current flows.
3. Source: The other terminal through which the main current flows; connected to the Drain via the channel.
4. Body/Back Gate: Sometimes internally connected to the source to minimize the body effect.
The TN2010H-6G-TR is used in applications requiring efficient switching and amplification, such as DC-DC converters and power management systems.