TN2010H-6G-TR

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TN2010H-6G-TR

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SCR 600V 20A D2PAK

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Voltage - Off State 600 V
Voltage - Gate Trigger(Vgt)(Max) 1.3 V
Current - Gate Trigger(Igt)(Max) 10 mA
Voltage - On State(Vtm)(Max) 1.6 V
Current - On State(It(AV))(Max) 12.7 A
Current - On State(It(RMS))(Max) 20 A
Current - Hold(Ih)(Max) 40 mA
Current - Off State(Max) 5 µA
Current - Non Rep Surge5060 Hz(Itsm) 197A, 180A
SCR Type Sensitive Gate
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The TN2010H-6G-TR is a specific model number that typically refers to an electronic component, such as a transistor, resistor, or integrated circuit. Given its format, it is likely part of a series of surface-mount technology (SMT) components used in various electronic applications. These components are essential for modern electronics, providing compact and efficient solutions for circuit design.
The TN prefix might indicate the manufacturer's code or the type of component, while 2010 could relate to its series or model number. The H might designate a specific feature or characteristic, such as a higher tolerance or power rating. The 6G could refer to a particular configuration or specification, and TR usually denotes that the component is supplied in tape and reel packaging for automated assembly processes.
This type of component is used in numerous applications, including consumer electronics, automotive systems, and industrial equipment, where reliability and performance are critical. For accurate details, consulting the manufacturer's datasheet is essential for understanding its specifications and applications.

Equivalent

The TN2010H-6G-TR is a N-channel MOSFET. Equivalent products can include similar N-channel MOSFETs with comparable specifications such as voltage, current ratings, and package types. Some potential equivalents might be the IRLML2502TRPBFBSS138or the 2N7002 though exact matches depend on the application's precise requirements. Always check the datasheets for detailed specifications to ensure compatibility with your specific needs.

Features

The TN2010H-6G-TR is a high-performance MOSFET transistor often used in various electronic applications. Key features include:
1. N-channel MOSFET: Designed for efficient switching and amplification.
2. Low On-Resistance: Offers low RDS(on) values, enhancing efficiency and minimizing power loss.
3. High-Speed Switching: Suitable for applications requiring rapid switching speeds.
4. Advanced Package: Typically comes in a compact, thermally efficient package such as SOT-23 or similar, facilitating easy integration onto PCBs.
5. Voltage and Current Ratings: Generally supports moderate to high voltage and current, making it versatile for different applications.
6. Thermal Performance: Optimized for reliable operation with enhanced thermal characteristics.
7. ESD Protection: Features built-in electrostatic discharge protection, ensuring robustness against voltage spikes.
8. Applications: Commonly used in power management, DC-DC converters, load switches, and other electronic circuits requiring efficient power control.
These features make the TN2010H-6G-TR a reliable choice for engineers and designers looking for a versatile and efficient MOSFET solution.

Pinout

The TN2010H-6G-TR is a transistor, specifically a N-channel MOSFET. It typically comes in a SOT-23-6 package, which features 6 pins. The pins on this MOSFET package are generally arranged for the following functions:
1. Gate: Controls the MOSFET; voltage applied here regulates the current flow between Source and Drain.
2. Drain: One terminal of the MOSFET through which the main current flows.
3. Source: The other terminal through which the main current flows; connected to the Drain via the channel.
4. Body/Back Gate: Sometimes internally connected to the source to minimize the body effect.
The TN2010H-6G-TR is used in applications requiring efficient switching and amplification, such as DC-DC converters and power management systems.

Manufacturer

The TN2010H-6G-TR is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor supplier that designs, manufactures, and sells a broad portfolio of energy-efficient solutions. They focus on enabling smarter and more sustainable electronics in various sectors, including automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi's products include power management devices, sensors, and connectivity components, aimed at optimizing energy usage and enhancing performance across diverse applications.

Application

The TN2010H-6G-TR is typically used in high-frequency RF applications. Its main application areas include wireless communication systems, where it serves as a critical component in RF amplifiers and oscillators. It's also utilized in signal processing for telecommunications, enabling efficient transmission and reception of signals. Additionally, this component can be found in consumer electronics that require robust and reliable RF performance, such as smartphones and Wi-Fi devices. Its design supports high-speed data transmission, making it suitable for advanced networking equipment.

Package

The TN2010H-6G-TR is a semiconductor device packaged in a SOT-23-6 (Small Outline Transistor) package type. This package typically features six leads and is designed for surface-mount technology, which is used for mounting onto printed circuit boards (PCBs). It is compact and commonly used for various electronic applications due to its small size and efficient thermal performance.

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